SFT6

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
SYNSEMI		整流二极管
页数	文件大小	规格书
2页	30K
描述
SUPER FAST RECTIFIER DIODES

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SFT6 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.75
Base Number Matches：	1

SFT6 数据手册

SUPER FAST

RECTIFIER DIODES

SFT1 - SFT9

PRV : 50 - 1000 Volts

Io : 2.5 Amperes

D2A

FEATURES :

* High current capability

* High surge current capability

* High reliability

1.00 (25.4)

0.161 (4.1)

MIN.

0.154 (3.9)

* Low reverse current

* Low forward voltage drop

* Super fast recovery time

* Pb / RoHS Free

0.284 (7.2)

0.268 (6.8)

1.00 (25.4)

0.040 (1.02)

0.0385 (0.98)

MIN.

MECHANICAL DATA :

* Case : D2A Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

Dimensions in inches and ( millimeters )

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.645 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

SYMBOL SFT1 SFT2 SFT3 SFT4 SFT5 SFT6 SFT7 SFT8 SFT9 UNIT

VRRM

VRMS

VDC

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100

150

105

150

200

140

200

300

210

300

400

280

400

600

420

600

800 1000

560 700

800 1000

Maximum DC Blocking Voltage

Maximum Average Forward Current

100

IF(AV)

2.5

0.375"(9.5mm) Lead Length

Ta = 55 °C

Maximum Peak Forward Surge Current

8.3 ms. Single half sine wave Superimposed

on rated load (JEDEC Method)

IFSM

100

1.7

4.0

Maximum Peak Forward Voltage at IF = 2.5 A.

0.95

5.0

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Ta = 25 °C

IR(H)

Trr

Ta = 100 °C

Maximum Reverse Recovery Time ( Note 1 )

Typical Junction Capacitance ( Note 2 )

Junction Temperature Range

- 65 to + 150

°C

TSTG

Storage Temperature Range

Notes :

( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.

( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC

Page 1 of 2

Rev. 02 : March 25, 2005

中文翻译

下载PDF

与SFT6相关器件

型号	品牌	获取价格	描述	数据表
SFT6032	SSDI	获取价格	50 AMPS 90 - 120 Volts High Power NPN Transistors
SFT6032/3	SSDI	获取价格	Power Bipolar Transistor, 50A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
SFT6033	SSDI	获取价格	50 AMPS 90 - 120 Volts High Power NPN Transistors
SFT6033/3	SSDI	获取价格	Power Bipolar Transistor, 50A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
SFT6036	SSDI	获取价格	PNP Darlington Power Transistor
SFT6036/5	SSDI	获取价格	4 A, 80 V PNP Darlington Power Transistor
SFT6036J	SSDI	获取价格	暂无描述
SFT6036JS	SSDI	获取价格	暂无描述
SFT6036JTXV	SSDI	获取价格	暂无描述
SFT6036M	SSDI	获取价格	4 A, 80 V PNP Darlington Power Transistor