Datasheet > SFT5672M

SFT5672M

更新时间： 2024-06-20 14:03:09

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	183K
描述
30 A, 120 V High Power NPN Transistor

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数据手册

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SFT5672M 数据手册

SFT5671 and SFT5672

SFT5672E

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

30 – 50 AMPS

90 - 130 Volts

High Power

Part Number / Ordering Information ^1/

SFT5671 __ __ __

SFT5672 __ __ __

SFT5672E __ __ __

NPN Transistors

│

└

│

└

└ Screening __ = No Screening

TX = TX Level

Features:

TXV = TXV Level

•

High Frequency transistor with BV_CEOto 130 Volts

Enhanced SOA capability and Fast Switching

High Power Dissipation 140 Watts

S = S Level

Lead Bend ^{3/ 4/}__ = Straight Leads

UB = Up Bend

•

200^oC Operating Temperature

DB = Down Bend

Package ^3//3 = TO-3

TX, TXV, S-Level Screening per MIL-PRF-19500

available; consult factory

M = TO-254

S1 = SMD 1

•

Enhanced performance version: SFT5672E

Maximum Ratings

Symbol

Value

Units

SFT5671

SFT5672

Collector – Emitter Voltage

120

130

V_CEO

Volts

SFT5672E

SFT5671

120

150

250

Collector – Base Voltage

SFT5672

V_CBO

Volts

SFT5672E

Emitter – Base Voltage

Collector Current

V_EBO

I_C

Volts

Amps

SFT5671, SFT5672

SFT5672E

Base Current

I_B

TO-3 (T_C≤ 25ºC)

TO-254 (T_C≤ 25ºC)

SMD 1 (T_C≤ 25ºC)

140

116

175

Total Power Dissipation

P_D

T_J& T_STG

R_0JC

Watts

ºC

-65 to +200

Operating & Storage Temperature

TO-3

TO-254

SMD 1

1.25

1.5

Maximum Thermal Resistance

(Junction to Case)

ºC/W

1.0

TO-3 (/3)

TO-254 (M)

SMD 1(S1)

3/ For Package Outlines Contact Factory.

4/ Up and Down Bend Configurations are Available for ‘M’ (TO-254) Packages Only.

NOTES:

1/ For Ordering Information, Price, and Availability Contact Factory.

NOTE: All specifications are subject to change without notification.

DATA SHEET #: TR0076C

DOC

SCD's for these devices should be reviewed by SSDI prior to release.

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