5秒后页面跳转
SFS2324 PDF预览

SFS2324

更新时间: 2024-11-16 09:28:07
品牌 Logo 应用领域
SSDI 可控硅整流器
页数 文件大小 规格书
2页 107K
描述
SILICON CONTROLLED RECTIFIER

SFS2324 技术参数

生命周期:Active零件包装代码:TO-5
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.13
外壳连接:ANODE配置:SINGLE
最大直流栅极触发电流:0.35 mAJEDEC-95代码:TO-5
JESD-30 代码:O-MBCY-W3元件数量:1
端子数量:3最高工作温度:125 °C
最低工作温度:-65 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
认证状态:Not Qualified最大均方根通态电流:1.6 A
断态重复峰值电压:100 V重复峰值反向电压:100 V
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM触发设备类型:SCR
Base Number Matches:1

SFS2324 数据手册

 浏览型号SFS2324的Datasheet PDF文件第2页 
SFS2323 thru SFS2329  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, CA 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
1.6 AMP  
SILICON CONTROLLED  
RECTIFIER  
Designer’s Data Sheet  
Part Number/Ordering Information 1/  
SFS23 ___ ___  
Screening 2/  
__ = Not Screened  
TX = TX Level  
TXV = TXV  
50 400 VOLTS  
FEATURES:  
S = S Level  
Low-Level Gate Characteristics  
IGT = 200 μA (Max) @ 25oC  
Low Holding Current IH = 1 mA (Max) @ 25oC  
Anode Common to Case  
Voltage/Family  
23 = 50V  
27 = 250V  
28 = 300V  
29 = 400V  
24 =100V  
26 = 200V  
Hermetically Sealed  
MAXIMUM RATINGS  
Symbol  
Value  
Units  
Volts  
SFS2323  
SFS2324  
SFS2326  
SFS2327  
SFS2328  
SFS2329  
50  
100  
200  
250  
300  
400  
VDRM  
VRRM  
Peak Repetitive Reverse Voltage  
and DC Blocking Voltage  
SFS2323  
SFS2324  
SFS2326  
SFS2327  
SFS2328  
SFS2329  
75  
150  
300  
350  
400  
500  
Non-Repetitive Peak Reverse Blocking Voltage  
(t < 5.0 ms)  
VRSM  
Volts  
RMS On-State Current  
(All Conduction Angles)  
IT (RMS)  
ITSM  
1.6  
15  
Amps  
Amps  
Peak Non-Repetitive Surge Current  
(One Cycle, 60 Hz, TC = 80oC )  
Peak Gate Power  
PGM  
PG (AV)  
IGM  
0.1  
0.01  
Watts  
Watts  
Amps  
Volts  
oC  
Average Gate Power  
Peak Gate Current  
0.1  
Peak Gate Voltage  
VGM  
TJ  
6.0  
Operating Junction Temperature Range  
Storage Temperature Range  
Thermal Resistance, Junction to Case  
-65 to +125  
-65 to +150  
30  
Tstg  
oC  
RθJC  
oC/W  
NOTES:  
TO-5  
1/ For ordering information, price, operating curves, and availability- Contact factory.  
2/ Screening based on MIL-PRF-19500. Screening flows available on request.  
3/ Unless otherwise specified, all electrical characteristics @25ºC.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: SCR004C  
DOC  

与SFS2324相关器件

型号 品牌 获取价格 描述 数据表
SFS2324S SSDI

获取价格

暂无描述
SFS2324TX SSDI

获取价格

暂无描述
SFS2324TXV SSDI

获取价格

Silicon Controlled Rectifier, 1.6A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-5, HER
SFS2326 SSDI

获取价格

1.6 AMPS 200 - 400 VOLTS SILICON CONTROLLED RECTIFIER
SFS2326S SSDI

获取价格

Silicon Controlled Rectifier, 1.6A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-5, HER
SFS2326TX SSDI

获取价格

Silicon Controlled Rectifier, 1.6A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-5, HER
SFS2327 SSDI

获取价格

1.6 AMPS 200 - 400 VOLTS SILICON CONTROLLED RECTIFIER
SFS2327S SSDI

获取价格

Silicon Controlled Rectifier, 1.6A I(T)RMS, 250V V(DRM), 250V V(RRM), 1 Element, TO-5, HER
SFS2327TX SSDI

获取价格

暂无描述
SFS2327TXV SSDI

获取价格

Silicon Controlled Rectifier, 1.6A I(T)RMS, 250V V(DRM), 250V V(RRM), 1 Element, TO-5, HER