Datasheet > SFS1829/18TX

SFS1829/18TX

更新时间： 2024-11-16 15:50:59

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	165K
描述
Silicon Controlled Rectifier,

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技术参数
数据手册

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SFS1829/18TX 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.67	触发设备类型：	SCR
Base Number Matches：	1

SFS1829/18TX 数据手册

SFS1826 – SFS1829

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

Part Number/Ordering Information ^1/

1.6 AMP

SILICON CONTROLLED RECTIFIER

200 - 400 Volts

SFS182 ___ ___ ___

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV

│

└

│

└

FEATURES:

S = S Level

 Low-Level Gate Characteristics

Package

/18 = TO-18

 Low Holding Current I_H= 5 mA (Max) @ 25^oC

 Anode Common to Case

Voltage/Family

6 = 200V

 Hermetically Sealed

 TX, TXV, S-Level Screening Available – Consult Factory

8 = 300V

9 = 400V

7 = 250V

MAXIMUM RATINGS^3/

Symbol

Value

Units

Volts

SFS1826

SFS1827

SFS1828

SFS1829

200

250

300

400

Peak Repetitive Reverse Voltage

and DC Blocking Voltage

V_DRM

V_RRM

SFS1826

SFS1827

SFS1828

SFS1829

300

350

400

500

Non-Repetitive Peak Reverse Blocking Voltage

(t < 5.0 ms)

V_RSM

Volts

RMS On-State Current

1.6

I_{T (RMS)}

I_T(AV)

I_TSM

Amps

(All Conduction Angles)

T_C= 50°C

T_A= 25°C

1.0

0.7

Average On-State Current

Peak Non-Repetitive Surge Current

(One Cycle, 60 Hz, T_C= 80°C)

0.1

0.01

Peak Gate Power

P_GM

P_G(AV)

I_GM

Watts

Amps

Volts

°C

Average Gate Power

0.1

Peak Gate Current

6.0

Peak Gate Voltage

V_GM

T_J

-65 to +200

Operating Junction Temperature Range

Storage Temperature Range

Thermal Resistance, Junction to Case

NOTES:

T_stg

R_θJC

°C

°C/W

TO-18 (/18)

1/ For ordering information, price, operating curves, and availability- Contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, all electrical characteristics @25°C, R_GK= 1K Ω.

4/ RGK current is not included in measurement.

5/ Thyristor devices shall not be tested with a constant current source for forward and reverse blocking

capability such that the voltage applies exceeds the rated blocking voltage.

6/ Thyristor devices shall not have a positive bias applied to the gate concurrently with a negative potential

applied to the anode.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: SCR005B

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