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SFRU9120 PDF预览

SFRU9120

更新时间: 2024-11-14 22:23:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 228K
描述
Advanced Power MOSFET

SFRU9120 数据手册

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SFR/U9120  
Advanced Power MOSFET  
FEATURES  
BVDSS = -100 V  
RDS(on) = 0.6   
ID = -4.9 A  
n Avalanche Rugged Technology  
n Rugged Gate Oxide Technology  
n Lower Input Capacitance  
n Improved Gate Charge  
n Extended Safe Operating Area  
n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V  
n Lower RDS(ON) : 0.444 (Typ.)  
D-PAK  
I-PAK  
2
1
1
2
3
3
1. Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Value  
-100  
-4.9  
-3.4  
-20  
Units  
VDSS  
Drain-to-Source Voltage  
V
Continuous Drain Current (TC=25oC)  
Continuous Drain Current (TC=100oC)  
Drain Current-Pulsed  
ID  
A
1
IDM  
VGS  
EAS  
IAR  
A
V
O
Gate-to-Source Voltage  
±30  
144  
-4.9  
3.2  
2
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
O
1
O
1
EAR  
dv/dt  
Repetitive Avalanche Energy  
mJ  
V/ns  
W
O
3
Peak Diode Recovery dv/dt  
-6.5  
2.5  
O
o
*
Total Power Dissipation (TA=25 C)  
Total Power Dissipation (TC=25oC)  
Linear Derating Factor  
PD  
32  
W
W/oC  
0.26  
Operating Junction and  
TJ , TSTG  
- 55 to +150  
300  
Storage Temperature Range  
oC  
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from case for 5-seconds  
TL  
Thermal Resistance  
Symbol  
Characteristic  
Typ.  
Max.  
Units  
RθJC  
Junction-to-Case  
Junction-to-Ambient  
Junction-to-Ambient  
--  
--  
--  
3.91  
50  
oC/W  
RθJA  
RθJA  
*
110  
* When mounted on the minimum pad size recommended (PCB Mount).  
Rev. C  

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