SFH620AA/AGB
5.3 kV TRIOS Optocoupler
AC Voltage Input
FEATURES
• High Current Transfer Ratios
at 5 mA: 50–600%
Dimensions in Inches (mm)
2
1
pin one ID
Anode/
at 1 mA: 45% typical (>13)
• Low CTR Degradation
• Good CTR Linearity Depending on Forward
Current
.255 (6.48)
.268 (6.81)
1
2
4
3
Collector
Emitter
Cathode
• Isolation Test Voltage, 5300 VAC
RMS
Cathode/
Anode
• High Collector-Emitter Voltage, V
• Low Saturation Voltage
=70 V
CEO
3
4
• Fast Switching Times
• Field-Effect Stable byTRIOS (TRansparent IOn
Shield)
.179 (4.55)
.190 (4.83)
.300 (7.62) typ.
.031 (.79) typ.
.050 (1.27) typ.
.030 (.76)
.045 (1.14)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100"(2.54 mm) Spacing
• High Common-Mode Interference Immunity
(Unconnected Base)
.130 (3.30)
.150 (3.81)
.230 (5.84)
.250 (6.35)
10 °
4°
.110 (2.79)
.130 (3.30)
typ.
.020 (.508 )
.035 (.89)
.050 (1.27)
•
•
Underwriters Lab File #52744
3°–9°
.008 (.20)
VDE 0884 Available with Option 1
.018 (.46)
.022 (.56)
.012 (.30)
• SMD Option, See SFH6206 Data Sheet
1.00 (2.54)
DESCRIPTION
Maximum Ratings
Emitter
Reverse Voltage ..............................................................................±60 mA
Surge Forward Current (t ≤10 µs).....................................................±2.5 A
Total Power Dissipation .................................................................. 100 mW
Detector
The SFH620AA/AGB features a high current transfer
ratio, low coupling capacitance and high isolation
voltage. These couplers have a GaAs infrared emit-
ting diode emitter, which is optically coupled to a sil-
icon planar phototransistor detector, and is
P
incorporated in a plastic DIP-4 package.
Collector-Emitter Voltage ..................................................................... 70 V
Emitter-Collector Voltage ........................................................................ 7 V
Collector Current ............................................................................... 50 mA
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spac-
ing.
Collector Current (t ≤1 ms) ............................................................. 100 mA
Total Power Dissipation .................................................................. 150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
P
Creepage and clearance distances of >8 mm are
achieved with option 6. This version complies with
IEC 950 (DIN VDE 0805) for reinforced insulation up
part 2, Nov. 74 ................................................................... 5300 VAC
RMS
to an operation voltage of 400 V
or DC.
RMS
Creepage ......................................................................................... ≥7 mm
Clearance ......................................................................................... ≥7 mm
Insulation Thickness between Emitter and Detector....................... 0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 .................................................... 175
Isolation Resistance
12
V =500 V, T =25°C ................................................................... ≥10
Ω
Ω
IO
A
11
V =500 V, T =100°C ................................................................. ≥10
IO
A
Storage Temperature Range ................................................ –55 to +150°C
Ambient Temperature Range ............................................... –55 to +100°C
Junction Temperature ........................................................................ 100°C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane ≥1.5 mm) ............................................. 260°C
1