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SFH615A-14 PDF预览

SFH615A-14

更新时间: 2024-11-21 14:44:39
品牌 Logo 应用领域
威世 - VISHAY 输出元件光电
页数 文件大小 规格书
4页 262K
描述
Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-4

SFH615A-14 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:PLASTIC, DIP-4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.40.80.00风险等级:5.51
Coll-Emtr Bkdn Voltage-Min:70 V配置:SINGLE
标称电流传输比:40%最大暗电源:100 nA
最大正向电流:0.06 A最大绝缘电压:5300 V
JESD-609代码:e3元件数量:1
最高工作温度:100 °C最低工作温度:-55 °C
光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER端子面层:Matte Tin (Sn)
Base Number Matches:1

SFH615A-14 数据手册

 浏览型号SFH615A-14的Datasheet PDF文件第2页浏览型号SFH615A-14的Datasheet PDF文件第3页浏览型号SFH615A-14的Datasheet PDF文件第4页 
SFH615A  
5.3 kV TRIOS Optocoupler  
High Reliability  
FEATURES  
Dimensions in inches (mm)  
2
• Variety of Current Transfer Ratios at I =10 mA  
F
– SFH615A-1, 40–80%  
– SFH615A-2, 63–125%  
– SFH615A-3, 100–200%  
– SFH615A-4, 160–320%  
– SFH615A-12, 40–125%  
– SFH615A-23, 63–200%  
– SFH615A-34, 100–320%  
– SFH615A-13, 40–200%  
– SFH615A-24, 63–320%  
– SFH615A-14, 40–320%  
• Low CTR Degradation  
• Good CTR Linearity Depending on Forward  
Current  
1
pin one ID  
.255 (6.48)  
.268 (6.81)  
Anode  
Collector  
Emitter  
1
2
4
3
Cathode  
3
4
.179 (4.55)  
.190 (4.83)  
.300 (7.62) typ.  
.031 (.79) typ.  
.030 (.76)  
.045 (1.14)  
.050 (1.27) typ.  
.130 (3.30)  
.150 (3.81)  
.230 (5.84)  
.250 (6.35)  
Withstand Test Voltage, 5300 V  
RMS  
High Collector-Emitter Voltage, V  
• Low Saturation Voltage  
• Fast Switching Times  
• Field-Effect Stable by TRIOS  
(TRansparent IOn Shield)  
Temperature Stable  
=70 V  
10°  
CEO  
4°  
.110 (2.79)  
.130 (3.30)  
typ.  
.020 (.508 )  
.035 (.89)  
3°–9°  
.008 (.20)  
.012 (.30)  
.018 (.46)  
.022 (.56)  
.050 (1.27)  
0.100 (2.54)  
• Low Coupling Capacitance  
Maximum Ratings  
Emitter  
Reverse Voltage ...............................................................................6.0 V  
DC Forward Current ...................................................................... 60 mA  
• End-Stackable, .100" (2.54 mm) Spacing  
• High Common-Mode Interference Immunity  
(Unconnected Base)  
Surge Forward Current (t 10 µs)....................................................2.5 A  
Total Power Dissipation.............................................................. 100 mW  
Detector  
• Underwriters Lab File #52744  
P
VE  
D
VDE 0884 Available with Option 1  
Collector-Emitter Voltage...................................................................70 V  
Emitter-Collector Voltage..................................................................7.0 V  
Collector Current ........................................................................... 50 mA  
DESCRIPTION  
The SFH615A features a large variety of transfer ratio,  
low coupling capacitance and high isolation voltage.  
These couplers have a GaAs infrared emitting diode  
emitter, which is optically coupled to a silicon planar  
phototransistor detector, and is incorporated in a plas-  
tic DIP-4 package.  
Collector Current (t 1.0 ms) ...................................................... 100 mA  
P
Total Power Dissipation.............................................................. 150 mW  
Package  
Isolation Test Voltage between Emitter and  
Detector, refer to Climate DIN 40046,  
The coupling devices are designed for signal transmis-  
sion between two electrically separated circuits.  
part 2, Nov. 74, t=1.0 s....................................................... 5300 V  
RMS  
Creepage....................................................................................7.0 mm  
Clearance....................................................................................7.0 mm  
Insulation Thickness between Emitter and Detector .................0.4 mm  
Comparative Tracking Index  
The couplers are end-stackable with 2.54 mm lead  
spacing.  
Creepage and clearance distances of >8.0 mm are  
achieved with option 6. This version complies with IEC  
950 (DIN VDE 0805) for reinforced insulation up to an  
per DIN IEC 112/VDE0 303, part 1................................................175  
Isolation Resistance  
12  
V =500 V, T =25°C ................................................................10  
IO  
A
11  
operation voltage of 400 V  
or DC.  
RMS  
V =500 V, T =100°C ..............................................................10  
IO  
A
Storage Temperature Range..............................................–55 to +150°C  
Ambient Temperature Range ............................................–55 to +100°C  
Junction Temperature..................................................................... 100°C  
Soldering Temperature (max. 10 s. Dip Soldering  
Specifications subject to change.  
Distance to Seating Plane 1.5 mm) .......................................... 260°C  
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA  
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)  
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany  
www.osram-os.com • +49-941-202-7178  
1
February 23, 2000-14  

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