生命周期: | Active | 零件包装代码: | TO-254AA |
包装说明: | FLANGE MOUNT, S-XSFM-P3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.09 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 1500 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 300 V |
最大漏极电流 (ID): | 50 A | 最大漏源导通电阻: | 0.055 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-254AA |
JESD-30 代码: | S-XSFM-P3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | UNSPECIFIED | 封装形状: | SQUARE |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
SFF50N30MUB | SSDI | Power Field-Effect Transistor, 50A I(D), 300V, 0.055ohm, 1-Element, N-Channel, Silicon, Me |
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SFF50N30MUBS | SSDI | Power Field-Effect Transistor, 50A I(D), 300V, 0.055ohm, 1-Element, N-Channel, Silicon, Me |
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SFF50N30MUBTX | SSDI | Power Field-Effect Transistor, 50A I(D), 300V, 0.055ohm, 1-Element, N-Channel, Silicon, Me |
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SFF50N30MUBTXV | SSDI | Power Field-Effect Transistor, 50A I(D), 300V, 0.055ohm, 1-Element, N-Channel, Silicon, Me |
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SFF50N30Z | SSDI | Avalanche Rated N-channel MOSFET |
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SFF50N30ZDB | SSDI | Power Field-Effect Transistor, 50A I(D), 300V, 0.055ohm, 1-Element, N-Channel, Silicon, Me |
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