Datasheet > SFF50N50ZDBS

SFF50N50ZDBS

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	119K
描述
Power Field-Effect Transistor, 27A I(D), 500V, 0.175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254Z, 3 PIN

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SFF50N50ZDBS 数据手册

SFF27N50M

SFF27N50Z

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

27 AMP , 500 Volts, 175 mΩ

Avalanche Rated N-channel

MOSFET

Part Number / Ordering Information ^1/

SFF27N50 ___ ___ ___

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

│

└

│

└

Features:

Rugged poly-Si gate

Lead Option ^3/

__ = Straight Leads

DB = Down Bend

UB = Up Bend

•

Lowest ON-resistance in the industry

Avalanche rated

Hermetically Sealed, Isolated Package

Low Total Gate Charge

Fast Switching

TX, TXV, S-Level screening available

Improved (R_DS(ON)Q_G) figure of merit

Package ^{3/ 4/}

M = TO-254

Z = TO-254Z

Maximum Ratings

Symbol

V_DSS

Value

Units

Drain - Source Voltage

Gate – Source Voltage

100

±20

±30

continuous

transient

V_GS

I_D1

Max. Continuous Drain Current (package

limited)

@ T_C= 25ºC

@ T_C= 125ºC

I_D2

I_D3

Max. Instantaneous Drain Current (Tj limited)

Max. Avalanche current

I_AR

@ L= 0.1 mH

@ T_C= 25ºC

E_AS

E_AR

1500

Single and Repetitive Avalanche Energy

Total Power Dissipation

100

P_D

Operating & Storage Temperature

ºC

-55 to +150

T_OP& T_STG

Maximum Thermal Resistance

(Junction to Case)

1.0

(typ.0.75)

R_θJC

ºC /W

NOTES:

TO-254

TO-254Z

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available

on request.

3/ For package outlines / lead bending options / pinout

configurations - contact factory.

4/ Maximum current limited by package configuration

5/ Unless otherwise specified, all electrical characteristics @25^oC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00165G

DOC

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与SFF50N50ZDBS相关器件

型号	品牌	获取价格	描述	数据表
SFF50N50ZDBTXV	SSDI	获取价格	Power Field-Effect Transistor, 27A I(D), 500V, 0.175ohm, 1-Element, N-Channel, Silicon, Me
SFF50N50ZTXV	SSDI	获取价格	Power Field-Effect Transistor, 27A I(D), 500V, 0.175ohm, 1-Element, N-Channel, Silicon, Me
SFF50N50ZUB	SSDI	获取价格	Power Field-Effect Transistor, 27A I(D), 500V, 0.175ohm, 1-Element, N-Channel, Silicon, Me
SFF50N50ZUBTXV	SSDI	获取价格	Power Field-Effect Transistor, 27A I(D), 500V, 0.175ohm, 1-Element, N-Channel, Silicon, Me
SFF55N20M	SSDI	获取价格	Power Field-Effect Transistor, 50A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Me
SFF55N20MDB	SSDI	获取价格	暂无描述
SFF55N20MDBTX	SSDI	获取价格	Transistor
SFF55N20MTX	SSDI	获取价格	Transistor
SFF55N20MUB	SSDI	获取价格	Transistor
SFF55N20MUBS	SSDI	获取价格	Transistor

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