SFF55N70 - SFF70N70
Solid State Devices, Inc.
Series
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
55 - 70 AMP , 700 Volts, 50 mΩ
Avalanche Rated N-Channel
MOSFET
SFF70N70 ___ ___ ___
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
Features:
Rugged poly-Si gate
Lowest ON-resistance in the industry
Avalanche rated
Hermetically sealed, isolated package
Low total gate charge
Fast switching
Lead Option 3/
__ = Straight Leads
DB = Down Bend
UB = Up Bend
Package 3/ 4/
N = TO-258
P = TO-259
S2 = SMD2
TX, TXV, S-level screening available
Improved (RDS(ON) QG) figure of merit
Maximum Ratings5/
Symbol
VDSS
Value
Units
V
Drain - Source Voltage
700
±20
±30
continuous
transient
Gate – Source Voltage
VGS
V
A
6/
Continuous Drain Current (TOP limited)
@ TC = 25°C
N, P
S2
ID1
55
70
ID2
Continuous Drain Current (TOP limited)
@ TC = 100°C
ID3
44
A
Pulsed Drain Current (Pwidth /TOP limited)
@ TC = 25°C
ID4
220
A
EAS
EAR
2000
3
Single and Repetitive Avalanche Energy
@ L= 0.1 mH
mJ
500
W
Total Power Dissipation @ TC = 25°C
PD
Operating & Storage Temperature
-55 to +150
°C
T
OP & TSTG
Maximum Thermal Resistance
(Junction to Case)
RθJC
0.25
°C/W
NOTES:
SMD2 (S2)
TO-258 (N)
TO-259 (P)
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact
factory.
2/ Screening based on MIL-PRF-19500. Screening flows
available on request.
3/ For lead bending options / pinout configurations - contact
factory.
4/ Maximum current limited by package configuration
5/ Unless otherwise specified, all electrical characteristics
@25oC.
6/ Package limited.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0061C
DOC