生命周期: | Active | 包装说明: | FLANGE MOUNT, R-MSFM-P3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.68 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 50 A |
最大漏源导通电阻: | 0.055 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-259 | JESD-30 代码: | R-MSFM-P3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
SFF50N20N | SSDI | 50 AMPS 200 VOLTS 0.055 OHM N-Channel POWER MOSFET |
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SFF50N20NP | SSDI | 50 AMPS 200 VOLTS 0.055 OHM N-Channel POWER MOSFET |
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SFF50N20P | SSDI | Power Field-Effect Transistor, 50A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Me |
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SFF50N20Z | SSDI | 50 AMPS 200 VOLTS 0.055 OHM N-Channel POWER MOSFET |
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SFF50N30M | SSDI | Avalanche Rated N-channel MOSFET |
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SFF50N30MDB | SSDI | Power Field-Effect Transistor, 50A I(D), 300V, 0.055ohm, 1-Element, N-Channel, Silicon, Me |
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