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SFF450ZUB PDF预览

SFF450ZUB

更新时间: 2024-02-03 07:00:21
品牌 Logo 应用领域
SSDI 局域网开关晶体管
页数 文件大小 规格书
3页 125K
描述
Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254Z, 3 PIN

SFF450ZUB 技术参数

生命周期:Active零件包装代码:TO-254AA
包装说明:FLANGE MOUNT, S-XSFM-P3针数:3
Reach Compliance Code:compliant风险等级:5.66
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (ID):13 A最大漏源导通电阻:0.4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-254AA
JESD-30 代码:S-XSFM-P3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SFF450ZUB 数据手册

 浏览型号SFF450ZUB的Datasheet PDF文件第2页浏览型号SFF450ZUB的Datasheet PDF文件第3页 
SFF450M  
SFF450Z  
Solid State Devices, Inc.  
14830 Valley View Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
Part Number / Ordering Information 1/  
13 AMP / 500 Volts  
0.4 Ω  
SFF450  
__ __ __  
Screening 2/ __ = Not Screen  
TX = TX Level  
N-Channel POWER MOSFET  
TXV = TXV Level  
S = S Level  
Features:  
Lead Option 3/ __ = Straight Leads  
DB = Down Bend  
Rugged Construction with Polysilicon Gate Cell  
Low RDS(ON) and High Transconductance  
Excellent High Temperature Stability  
Very Fast Switching Speed  
Fast Recovery and Superior dV/dt Performance  
Increased Reverse Energy Capability  
UB = Up Bend  
Package 3/ M = TO-254  
Z = TO-254Z  
Low Input and Transfer Capacitance for Easy Paralleling  
Ceramic Seals Available for Improved Hermeticity  
Hermetically Sealed Surface Mount Power Package  
TX, TXV, Space Level Screening Available  
Replacement for IRFM450 Types  
Maximum Ratings  
Symbol  
VDS  
Value  
500  
Units  
Volts  
Volts  
Amps  
ºC  
Drain – Source Voltage  
Gate – Source Voltage  
VGS  
±20  
Continuous Collector Current  
Operating & Storage Temperature  
ID  
13  
Top & Tstg  
-55 to +150  
Maximum Thermal Resistance  
Junction to Case  
1
ºC/W  
W
RθJC  
PD  
TC = 25ºC  
TC = 55ºC  
125  
95  
Total Device Dissipation  
TO-254 (M)  
TO-254Z (Z)  
For Pin Out Configuration and Optional Lead Bend, Se Page 3.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: F00097E  
DOC  

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