Datasheet > SFF15N100JDBS

SFF15N100JDBS

更新时间： 2024-11-24 17:13:51

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
3页	170K
描述
Power Field-Effect Transistor

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技术参数
数据手册

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SFF15N100JDBS 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.62
Base Number Matches：	1

SFF15N100JDBS 数据手册

SFF15N100 Series

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

15 AMP , 1000 Volts, 340 mΩ

Avalanche Rated N-Channel

MOSFET

SFF15N100 ___ ___ ___

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

│

└

│

└

Features:

 Rugged poly-Si gate

 Lowest ON-resistance in the industry

 Avalanche rated

 Hermetically Sealed, Isolated Package

 Low Total Gate Charge

 Fast Switching

Lead Option ^3/

__ = Straight Leads

DB = Down Bend

UB = Up Bend

Package ^{3/ 4/}

S1 = SMD1

M = TO-254

Z = TO-254Z

 TX, TXV, S-Level screening available

J = TO-257

 Improved (R_DS(ON)Q_G) figure of merit

Maximum Ratings^5/

Symbol

V_DSS

Value

Units

Drain - Source Voltage

1000

±20

±30

continuous

transient

Gate – Source Voltage

V_GS

I_D1

Max. Continuous Drain Current (package

limited)

@ T_C= 25°C

@ T_C= 100°C

I_D2

I_D3

Max. Instantaneous Drain Current (Tj limited)

Single and Repetitive Avalanche Energy

E_AS

E_AR

650

Total Power Dissipation

250

@ T_C= 25°C

P_D

Operating & Storage Temperature

-55 to +150

°C

T_OP& T_STG

Maximum Thermal Resistance

(Junction to Case)

R_θJC

1.0 (typ.0.75) °C/W

SMD1 (S1)

TO-257 (J)

TO-254 (M)

TO-254Z (Z)

NOTES:

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ For lead bending options / pinout configurations - contact factory.

4/ Maximum current limited by package configuration

5/ Unless otherwise specified, all electrical characteristics @25°C.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0063A

DOC

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SFF15N100JDBTXV	SSDI	获取价格	Power Field-Effect Transistor
SFF15N100M	SSDI	获取价格	Power Field-Effect Transistor
SFF15N100MUB	SSDI	获取价格	Power Field-Effect Transistor
SFF15N100MUBTX	SSDI	获取价格	Power Field-Effect Transistor
SFF15N100S1S	SSDI	获取价格	Power Field-Effect Transistor
SFF15N100S1TX	SSDI	获取价格	Power Field-Effect Transistor
SFF15N100ZDBS	SSDI	获取价格	Power Field-Effect Transistor
SFF15N100ZDBTX	SSDI	获取价格	Power Field-Effect Transistor
SFF15N100ZTX	SSDI	获取价格	Power Field-Effect Transistor
SFF15N100ZUB	SSDI	获取价格	Power Field-Effect Transistor