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SF51G PDF预览

SF51G

更新时间: 2024-11-28 20:56:19
品牌 Logo 应用领域
扬杰 - YANGJIE 功效二极管
页数 文件大小 规格书
4页 552K
描述
Rectifier Diode, 1 Phase, 1 Element, 5A, 50V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN

SF51G 技术参数

是否Rohs认证:符合生命周期:Contact Manufacturer
包装说明:DO-27, 2 PINReach Compliance Code:unknown
风险等级:5.61Is Samacsys:N
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.95 VJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:50 V
最大反向电流:5 µA最大反向恢复时间:0.035 µs
表面贴装:NO端子面层:Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SF51G 数据手册

 浏览型号SF51G的Datasheet PDF文件第2页浏览型号SF51G的Datasheet PDF文件第3页浏览型号SF51G的Datasheet PDF文件第4页 
RoHS  
SF51G THRU SF58G  
COMPLIANT  
Super Fast Recovery Rectifier  
Features  
Ultrafast reverse recovery time  
Low leakage current  
Low switching losses, high efficiency  
High forward surge capability  
Glass passivated chip junction  
Solder dip 275 °C max. 7 s, per JESD 22-B106  
Typical Applications  
For use in high frequency rectification and freewheeling  
application in switching mode converters and inverters  
for consumer, computer and telecommunication.  
Mechanical Data  
ackage: DO-201AD(DO-27)  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Color band denotes the cathode end  
Polarity:  
(Ta=25Unless otherwise specified)  
Maximum Ratings  
SF51G SF52G SF53G SF54G SF55G SF56G SF57G SF58G  
PARAMETER  
SYMBOL  
UNIT  
SF51G SF52G SF53G SF54G SF55G SF56G SF57G SF58G  
Device marking code  
VRRM  
V
A
50  
100  
150  
200  
300  
400  
500  
600  
Repetitive Peak Reverse Voltage  
Average Forward Current  
@60Hz sine wave, Resistance load, Ta =60  
IF(AV)  
5.0  
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Ta=25℃  
IFSM  
A
150  
T
-55 ~+150  
-55~+150  
Storage Temperature  
Junction Temperature  
stg  
T
j
T =25Unless otherwise specified)  
Electrical Characteristics  
a
SF51G SF52G SF53G SF54G SF55G SF56G SF57G SF58G  
PARAMETER  
SYMBOL  
UNIT  
TEST CONDITIONS  
Maximum instantaneous  
forward voltage drop per diode  
V
F
I
=5.0A  
FM  
V
0.95  
1.3  
1.7  
T =25℃  
5
a
Maximum DC reverse current  
at rated DC blocking voltage  
per diode  
I
μA  
R
T =100℃  
a
150  
IF=0.5A IR=1A  
IRR=0.25A  
Reverse Recovery time  
t
rr  
ns  
35  
Measured at 1MHZ  
and Applied Reverse  
Voltage of 4.0 V.D.C.  
Typical junction capacitance  
Cj  
pF  
60  
40  
1 / 4  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-A159  
Rev.2.1, 28-Apr-14  
www.21yangjie.com  

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