Datasheet > SF31G

SF31G

更新时间： 2024-11-18 12:32:15

品牌	Logo	应用领域
亞昕 - YEASHIN		快速恢复二极管
页数	文件大小	规格书
2页	53K
描述
SUPE RFAST RECOVERY RECTIFIERS VOLTAG E - 50 to 8 00 Volts CURRENT - 3.0 Amperes

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SF31G 数据手册

DATA SHEET

SF31G~SF38G

SEMICONDUCTOR

SUPERFAST RECOVERY RECTIFIERS

VOLTAG E - 50 to 800 Volts CURRENT - 3.0 Amperes

FEATURES

DO-201AD Unit:inch(mm)

• Superfast recovery times-epitaxial construction

• Low forward voltage, high current capability

• Exceeds environmental standards of MIL-S-19500/228

• Hermetically sealed

.210 (5.3)

.188 (4.8)

1.0 (25.4)

MIN.

• Low leakage

DIA.

• High surge capability

• Plastic package has Underwriters Laboratories

Flammability Classification 94V-O utilizing

Flame Retardant Epoxy Molding Compound

• High temperature soldering : 260^OC / 10 seconds at terminals

• Pb free product at available : 99% Sn above meet RoHS

environment substance directive request

MECHANICAL DATA

.375 (9.5)

.285 (7.2)

1.0 (25.4)

MIN.

.052 (1.3)

.048 (1.2)

DIA.

• Case: Molded plastic, DO-201AD

• Terminals: Axial leads, solderable to MIL-STD-202,

Method 208

• Polarity: Color Band denotes cathode end

• Mounting Position: Any

• Weight: 0.04 ounce, 1.12 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

ambient temperature unless otherwise specified.

Resistive or inductive load, 60Hz.

SYMBOLS

VRRM

VRMS

SF31G

SF32G

100

SF33G

150

SF34G

200

SF35G

SF36G

400

SF37G

600

SF38G UNITS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

300

210

300

800

640

800

105

140

320

420

VDC

Maximum DC Blocking Voltage

Maximum Average Forward

100

150

200

400

600

I(AV)

IFSM

Current .375"(9.5mm) lead length

3.0

°C

at TA=55

Peak Forward Surge Current, IFM (surge):

8.3ms single half sine-wave superimposed

on rated load(JEDEC method)

125.0

Maximum Forward Voltage at 3.0A DC

Maximum DC Reverse Current

0.95

1.25

1.7

5.0

at Rated DC Blocking Voltage

Maximum DC Reverse Current at

300

°C

Rated DC Blocking Voltage TA=125

TRR

Maximum Reverse Recovery Time(Note 1)

Typical Junction capacitance (Note 2)

Typical Junction Resistance(Note 3)

35.0

°C

RθJA

20.0

TJ,TSTG

°C

Operating and Storage Temperature Range TJ

-55 to +150

NOTES:

1. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A

2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC

3. Thermal resistance from junction to ambient and from junction to lead length 0.375”(9.5mm) P.C.B. mounted

http://www.yeashin.com

REV.02 20110725

中文翻译

下载PDF

与SF31G相关器件

型号	品牌	获取价格	描述	数据表
SF31G_1	TSC	获取价格	3.0 AMPS. Glass Passivated Super Fast Rectifiers
SF31G_10	TSC	获取价格	3.0 AMPS. Glass Passivated Super Fast Rectifiers
SF31G_15	SECOS	获取价格	3.0 Amp Glass Passivated Super Fast Rectifiers
SF31G-AP	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PL
SF31G-BP	MCC	获取价格	暂无描述
SF31G-BP-HF	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD,
SF31GP	MCC	获取价格	DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD, DO-201AD, 2 PIN, Rectifier Diode
SF31G-SF38G	HDSEMI	获取价格	DO-27 Plastic-Encapsulate Diodes
SF31G-TP	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PL
SF31G-TP-HF	MCC	获取价格	暂无描述

与SF31G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

SF31G

SF31G 数据手册

与SF31G相关器件

与SF31G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SF31G

SF31G 数据手册

与SF31G相关器件

与SF31G相关文章

您还可以找

您在本页遇到什么问题？