Datasheet > SF11G

SF11G

更新时间： 2024-11-25 12:32:15

品牌	Logo	应用领域
亞昕 - YEASHIN		快速恢复二极管
页数	文件大小	规格书
2页	56K
描述
SUPERFAST RECOVERY RECTIFIERS VOLTAGE - 50 to 8 00 Volts CURRENT - 1.0 Ampere

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中文翻译

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SF11G 数据手册

DATA SHEET

SEMICONDUCTOR

SF11G~SF18G

SUPERFAST RECOVERY RECTIFIERS

VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere

FEATURES

DO-41

Unit:inch(mm)

• Superfast recovery times-epitaxial construction

• Low forward voltage, high current capability

• Exceeds environmental standards of MIL-S-19500/228

• Hermetically sealed

.107 (2.7)

.080 (2.0)

DIA.

1.0 (25.4)

MIN.

• Low leakage

• High surge capability

• Plastic package has Underwriters Laboratories

Flammability Classification 94V-O utilizing

Flame Retardant Epoxy Molding Compound

• High temperature soldering : 260^OC / 10 seconds at terminals

• Pb free product at available : 99% Sn above meet RoHS

environment substance directive request

MECHANICAL DATA

.205 (5.2)

.160 (4.1)

1.0 (25.4)

MIN.

.034 (.86)

.028 (.71)

DIA.

• Case: Molded plastic, DO-41

• Terminals: Axial leads, solderable to MIL-STD-202,

Method 208

• Polarity: Color Band denotes cathode end

• Mounting Position: Any

• Weight: 0.012 ounce, 0.3 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 °CJ ambient temperature unless otherwise specified.

Resistive or inductive load, 60Hz.

SYMBOLS SF11G

SF12G

100

SF13G

150

SF14G

200

SF15G

SF16G

400

SF17G

600

SF18G UNITS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

300

210

300

800

640

800

105

140

320

420

Maximum DC Blocking Voltage

Maximum Average Forward

100

150

200

400

600

I(AV)

IFSM

Current .375"(9.5mm) lead length

1.0

°C

at TA=55

Peak Forward Surge Current, IFM (surge):

8.3ms single half sine-wave superimposed

on rated load(JEDEC method)

30.0

Maximum Forward Voltage at 1.0A DC

Maximum DC Reverse Current

0.95

1.25

1.7

5.0

at Rated DC Blocking Voltage

Maximum DC Reverse Current at

150

°C

Rated DC Blocking Voltage TA=125

TRR

Maximum Reverse Recovery Time(Note 1)

Typical Junction capacitance (Note 2)

Typical Junction Resistance(Note 3)

35.0

°C/W

°C

RθJA

TJ,TSTG

Operating and Storage Temperature Range TJ

-55to +150

NOTES:

1. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A

2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC

3. Thermal resistance from junction to ambient and from junction to lead length 0.375”(9.5mm) P.C.B. mounted

http://www.yeashin.com

REV.02 20110725

中文翻译

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与SF11G相关器件

型号	品牌	获取价格	描述	数据表
SF11G_1	TSC	获取价格	1.0 AMP. Glass Passivated Super Fast Rectifiers
SF11G_10	TSC	获取价格	1.0 AMP. Glass Passivated Super Fast Rectifiers
SF11G_13	TSC	获取价格	1.0AMP. Glass Passivated Super Fast Rectifiers
SF11H01	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41
SF11H02	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41
SF11H02-2	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41
SF11H02-3	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41
SF11H02-4	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41
SF11H02-5	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41
SF11H03	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41

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