Datasheet > SEP8706-001

SEP8706-001

更新时间： 2024-01-21 17:14:50

阅读下载

获取价格

如果您发现信息不准确，欢迎纠错

SEP8706-001 技术参数

SEP8706

AlGaAs Infrared Emitting Diode

FEATURES

Side-looking plastic package

50¡ (nominal) beam angle

880 nm wavelength

Higher output power than GaAs at equivalent

drive currents

Mechanically and spectrally matched to

SDP8406 phototransistor, SDP8106

photodarlington and SDP8000/8600 series

Schmitt trigger

INFRA-20.TIF

DESCRIPTION

OUTLINE DIMENSIONS in inches (mm)

The SEP8706 is an aluminum gallium arsenide infrared

emitting diode molded in a side-emitting smoke gray

plastic package. The chip is positioned to emit radiation

through a plastic lens from the side of the package.

These devices typically exhibit 70% greater power

intensity than gallium arsenide devices at the same

forward current.

Tolerance

3 plc decimals

2 plc decimals

±0.005(0.12)

±0.020(0.51)

DIM_071.ds4

Honeywell reserves the right to make

changes in order to improve design and

supply the best products possible.

12 3 4

下载PDF

型号	品牌	描述	获取价格	数据表
SEP8706-003	HONEYWELL	Infrared LED, 4.45mm, 1-Element, 880nm,	获取价格
SEP8706-2	HONEYWELL	Infrared LED, 1-Element, 880nm, PLASTIC PACKAGE-2	获取价格
SEP8706-3	HONEYWELL	Infrared LED, 1-Element, 880nm, PLASTIC PACKAGE-2	获取价格
SEP8736	HONEYWELL	Infrared Sensors Line Guide	获取价格
SEP8736-001	HONEYWELL	Infrared LED, 2.64mm, 1-Element, 880nm,	获取价格
SEP8736-002	HONEYWELL	Infrared Sensors Line Guide	获取价格