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SED20HB25TXV PDF预览

SED20HB25TXV

更新时间: 2024-11-30 20:51:39
品牌 Logo 应用领域
SSDI 二极管
页数 文件大小 规格书
2页 40K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 25V V(RRM), Silicon,

SED20HB25TXV 技术参数

生命周期:Active包装说明:S-XXSO-N2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.71
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.52 V
JESD-30 代码:S-XXSO-N2最大非重复峰值正向电流:350 A
元件数量:1相数:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:20 A
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:SMALL OUTLINE参考标准:MIL-19500
最大重复峰值反向电压:25 V最大反向电流:100 µA
表面贴装:YES技术:SCHOTTKY
端子形式:NO LEAD端子位置:UNSPECIFIED
Base Number Matches:1

SED20HB25TXV 数据手册

 浏览型号SED20HB25TXV的Datasheet PDF文件第2页 
SED20HB25  
SED20HE25  
Solid State Devices, Inc.  
14701 Firestone Blvd. * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
20 AMP  
25 VOLTS  
SUPER SCHOTTKY RECTIFIER  
Designer’s Data Sheet  
Part Number / Ordering Information 1/  
SED20__ 25 __  
FEATURES:  
L
Screening2/  
___ = None  
Optimized for 2.1V and 3.3V output power supplies.  
The SUPER SCHOTTKY series has been designed to  
provide ultra low forward voltage drops at low  
operating temperatures of 75°C.  
TX = TX Level  
TXV = TXV Level  
S = S Level  
Low VF, typically 360mV at 75°C  
Low reverse leakage  
Surface mountable  
L
Configuration  
HB = without lead  
HE = with lead  
Guard ring for overvoltage protection and ruggedness  
100oC operating temperature  
Hermetic package  
TX, TXV, and Space Level Screening Available2/  
Typical applications include parallel switching power  
supplies, converters, battery protection circuits, and  
redundant power subsystems.  
MAXIMUM RATINGS  
Symbol  
Value  
Units  
Volts  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
and DC Blocking Voltage  
25  
Average Rectified Forward Current  
IO  
20  
Amps  
Amps  
(Resistive load, 60 Hz, sine wave, TJ= 75oC)  
Peak Surge Current  
(8.3 ms pulse, half sine wave superimposed on IO, allow junction to  
IFSM  
120  
reach equilibrium between pulses, TJ = 25oC)  
Operating and Storage Temperature  
TOP & Tstg -55 to +100  
oC  
Maximum Thermal Resistance  
Junction to Case  
oC/W  
1.25  
RJC  
Notes:  
SEDPACK 1  
1/ For ordering information, price, operating curves, and availability – contact  
factory.  
2/ Screening based on MIL-PRF-19500. Screening flows available on request.  
HB Series  
HE Series  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: SH0011C  
DOC  

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