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SDURF1020CTD PDF预览

SDURF1020CTD

更新时间： 2024-11-22 00:47:31
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 812K
描述
10.0 Amperes Insulated Dual Tandem Polarity Ultra Fast Recovery Half Bridge Rectifiers

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SDURF1020CTD 数据手册

 浏览型号SDURF1020CTD的Datasheet PDF文件第2页 
SDURF1020CT thru SDURF1060CT  
SDURF1020CT/SDURF1030CT/SDURF1040CT/SDURF1060CT  
Pb Free Plating Product  
10.0 Amperes Insulated Dual Common Cathode Ultra Fast Recovery Half Bridge Rectifiers  
ITO-220AB/TO-220F-3L  
Unit : inch (mm)  
Features  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency  
.189(4.8)  
.165(4.2)  
.406(10.3)  
.381(9.7)  
.134(3.4)  
.118(3.0)  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
.130(3.3)  
.114(2.9)  
Application  
Automotive Inverters and Solar Inverters  
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
Car Audio Amplifiers and Sound Device Systems  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
(2.55)  
.1  
ꢀ
ꢀ
ꢀ
Case: ITO-220AB full plastic isolated package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
(2.55)  
Case  
Case  
Doubler  
Tandem Polarity  
Suffix "CTD"  
Case  
Case  
ꢀ
ꢀ
ꢀ
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 1.90 gram approximately  
Series  
Tandem Polarity  
Suffix "CTS"  
Negative  
Common Cathode Common Anode  
Suffix "CT" Suffix "CTR"  
Positive  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
℃
Rating at 25 ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SDURF1030CT  
SDURF1040CT  
UNIT  
SYMBOL  
SDURF1020CT  
SDURF1060CT  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
10.0  
150  
1.3  
A
A
V
IF(AV)  
o
(Total Device 2*5A=10A)  
Current TC=100 C  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
Maximum Instantaneous Forward Voltage  
1.7  
VF  
IR  
0.98  
(Both Diode/Per Diode/Per Leg)  
@ 5.0 A  
Maximum DC Reverse Current @TJ=25oC  
At Rated DC Blocking Voltage @TJ=125oC  
5.0  
μA  
μA  
100  
nS  
pF  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
CJ  
35  
65  
℃
/W  
R JC  
3.0  
Operating Junction and Storage  
Temperature Range  
-55 to +150  
℃
TJ, TSTG  
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.09T  
© 1995 Thinki Semiconductor Co., Ltd.  
12

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