Datasheet > SDT08S60_08

SDT08S60_08

更新时间： 2024-11-28 09:29:51

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管
页数	文件大小	规格书
8页	523K
描述
Silicon Carbide Schottky Diode

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中文翻译

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SDT08S60_08 数据手册

SDT08S60

thinQ! SiC Schottky Diode

Product Summary

Silicon Carbide Schottky Diode

• Worlds first 600V Schottky diode

• Revolutionary semiconductor

material - Silicon Carbide

600

RRM

• Switching behavior benchmark

• No reverse recovery

• No temperature influence on

the switching behavior

PG-TO220-2-2.

• No forward recovery

Pin 1

Pin 2

Type

Package

Ordering Code

Marking

SDT08S60

PG-TO220-2-2. Q67040S4647

D08S60

Maximum Ratings, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous forward current, T =100°C

11.3

RMS forward current, f=50Hz

FRMS

Surge non repetitive forward current, sine halfwave I

FSM

T =25°C, t =10ms

Repetitive peak forward current

FRM

T =150°C, T =100°C, D=0.1

Non repetitive peak forward current

FMAX

t =10µs, T =25°C

3.4

600

i t value, T =25°C, t =10ms

∫i dt

A²s

Repetitive peak reverse voltage

RRM

Surge peak reverse voltage

RSM

Power dissipation, T =25°C

tot

°C

Operating and storage temperature

T , T

-55... +175

stg

Page 1

2008-06-02

Rev. 2.2

12 3 4 5 6 7 8

中文翻译

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