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SDT06S60 PDF预览

SDT06S60

更新时间: 2024-11-27 22:21:15
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管肖特基二极管局域网
页数 文件大小 规格书
9页 262K
描述
Silicon Carbide Schottky Diode

SDT06S60 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-220AC包装说明:GREEN, PLASTIC, TO-220, 2 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.79Is Samacsys:N
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON CARBIDE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.7 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
JESD-609代码:e3最大非重复峰值正向电流:21.5 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:6 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:600 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
Base Number Matches:1

SDT06S60 数据手册

 浏览型号SDT06S60的Datasheet PDF文件第2页浏览型号SDT06S60的Datasheet PDF文件第3页浏览型号SDT06S60的Datasheet PDF文件第4页浏览型号SDT06S60的Datasheet PDF文件第5页浏览型号SDT06S60的Datasheet PDF文件第6页浏览型号SDT06S60的Datasheet PDF文件第7页 
SDP06S60, SDB06S60  
SDT06S60  
thinQ!SiC Schottky Diode  
Silicon Carbide Schottky Diode  
Worlds first 600V Schottky diode  
Revolutionary semiconductor  
material - Silicon Carbide  
Product Summary  
V
V
600  
21  
6
RRM  
Q
nC  
A
c
Switching behavior benchmark  
No reverse recovery  
No temperature influence on  
the switching behavior  
I
F
P-TO220-2-2.  
P-TO220-3.SMD  
P-TO220-3-1.  
Ideal diode for Power Factor  
Correction up to 1200W1)  
No forward recovery  
Type  
SDP06S60  
Package  
P-TO220-3-1.  
Ordering Code  
Q67040-S4371  
Marking Pin 1  
Pin 2  
C
C
Pin 3  
A
D06S60  
D06S60  
D06S60  
n.c.  
n.c.  
C
SDB06S60  
SDT06S60  
P-TO220-3.SMD Q67040-S4370  
P-TO220-2-2. Q67040-S4446  
A
A
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
I
6
A
Continuous forward current, T =100°C  
F
C
I
8.4  
21.5  
RMS forward current, f=50Hz  
FRMS  
Surge non repetitive forward current, sine halfwave I  
FSM  
T =25°C, t =10ms  
C
p
Repetitive peak forward current  
I
28  
60  
FRM  
T =150°C, T =100°C, D=0.1  
j
C
Non repetitive peak forward current  
I
FMAX  
t =10µs, T =25°C  
p
C
2
2
2.3  
600  
600  
57.6  
i t value, T =25°C, t =10ms  
i dt  
A²s  
V
C
p
Repetitive peak reverse voltage  
V
RRM  
Surge peak reverse voltage  
V
RSM  
P
W
Power dissipation, T =25°C  
tot  
C
°C  
Operating and storage temperature  
T , T  
-55... +175  
j
stg  
Page 1  
2004-03-23  
Rev. 2.0  

SDT06S60 替代型号

型号 品牌 替代类型 描述 数据表
IDH06S60C INFINEON

完全替代

2nd Generation thinQ SiC Schottky Diode
IDH03G65C5 INFINEON

类似代替

650V SiC thinQ!™ Generation 5 diodes
SDT04S60 INFINEON

类似代替

Silicon Carbide Schottky Diode

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