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SDR9104CTNDBS PDF预览

SDR9104CTNDBS

更新时间: 2024-01-23 23:15:11
品牌 Logo 应用领域
SSDI 整流二极管局域网超快速恢复二极管
页数 文件大小 规格书
2页 172K
描述
Rectifier Diode, 1 Phase, 2 Element, 100A, 400V V(RRM), Silicon, TO-258AA, TO-258, 3 PIN

SDR9104CTNDBS 技术参数

生命周期:Active包装说明:R-MSFM-P3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.61
Is Samacsys:N应用:HYPER FAST RECOVERY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.65 V
JEDEC-95代码:TO-259JESD-30 代码:R-MSFM-P3
最大非重复峰值正向电流:500 A元件数量:1
相数:1端子数量:3
最高工作温度:200 °C最大输出电流:100 A
封装主体材料:METAL封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
Base Number Matches:1

SDR9104CTNDBS 数据手册

 浏览型号SDR9104CTNDBS的Datasheet PDF文件第2页 
SDR9103CTN&P  
thru  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
SDR9105CTN&P  
100 AMP, 300 - 500 VOLTS  
40 nsec HYPER FAST  
Designer’s Data Sheet  
Part Number/Ordering Information 1/  
CENTERTAP RECTIFIER  
SDR91 __ __ __ __ __  
Screening 2/ __  
= Not Screened  
FEATURES:  
Hyper Fast Recovery: 40 ns Maximum  
High Surge Rating  
TX = TX Level  
TXV = TXV Level  
S
= S Level  
Lead Options  
__= Straight Leads,  
DB = Bent Down  
UB = Bent Up  
Low Reverse Leakage Current  
Hermetically Sealed Low Profile Package  
Gold Eutectic Die Attach Available  
Ultrasonic Aluminum Wire Bonds  
Ceramic Seal for Improved Hermeticity  
Available  
Package N = TO-258  
P = TO-259  
Configuration CT = Common Cathode  
CA = Common Anode  
Common Anode and Doubler Versions  
Available  
TX, TXV, or Space Level Screening Available  
D = Doubler  
DR = Doubler Reverse  
Family/Voltage  
03 = 300V  
04 = 400V  
05 = 500V  
MAXIMUM RATINGS  
RATING  
SYMBOL  
VRRM  
VALUE  
300  
UNIT  
Peak Repetitive Reverse Voltage  
and DC Blocking Voltage  
SDR9103CTN & P  
SDR9104CTN & P  
SDR9105CTN & P  
VRWM  
VR  
400  
500  
Volts  
Average Rectified Output Current 3/  
(Resistive Load, 60Hz, Sine Wave, TA=25°C)  
Peak Surge Current 4/  
IO  
100  
Amps  
(8.3 ms Pulse, Half Sine Wave, TA=25°C)  
IFSM  
500  
Amps  
°C  
Operating and Storage Temperature  
Maximum Thermal Resistance  
Junction to Case 3/  
TOP & TSTG  
-65 to +200  
RθJC  
0.4  
°C/W  
Junction to Case (Each Individual Diode)  
0.73  
TO-259  
TO-258  
NOTES:  
1/ For ordering Information, Price, and Availability, Contact Factory.  
2/ Screening per MIL-PRF-19500  
3/ Both Legs Tied Together.  
4/ Available with Higher Surge Ratings.  
NOTE: All specifications are subject to change without notification.  
DATA SHEET #: RH0033E  
DOC  
SCD's for these devices should be reviewed by SSDI prior to release.  

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