Datasheet > SDR6642UBTX

SDR6642UBTX

更新时间： 2024-09-25 15:50:47

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	123K
描述
Rectifier Diode,

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技术参数
数据手册

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SDR6642UBTX 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
Base Number Matches：	1

SDR6642UBTX 数据手册

SDR6642UB and

SDR6642CTUB

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

Part Number/Ordering Information^1/

CT __ __

SDR6642

300 mA

75 VOLTS

5 nsec HYPERFAST RECOVERY

CENTER TAP DIODE

│

└

│

└

│

└

Screening

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

Package Type

UB = UB Surface Mount Package

FEATURES:

•

Hyperfast Reverse Recovery Time: 3.5 nsec typ

Hermetically Sealed Surface Mount Package

Planar Passivated Chip

Configuration

__ = Single Die

CT = Common Cathode

Low Capacitance: 1.3 pf typ

TX, TXV, and S-Level Screening Available^2/

Replacement for 1N6642UB and 1N6642UBCC

Device Type (VRWM)

6642 = 75 V

MAXIMUM RATINGS^3/

RATING

SYMBOL

VALUE

UNIT

Peak Repetitive Reverse Voltage

DC Blocking Voltage

V_RWM

V_R

Average Rectified Forward Current

300

2.5

I_O

(Resistive Load, 60 Hz, Sine Wave, T_C= 25°C)

Peak Surge Current

(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to

reach equilibrium between pulses, T_C= 25°C)

I_FSM

-65 to +175

100

Operating & Storage Temperature

T_OPand T_STG

R_θJC

°C

Thermal Resistance

(Junction to Case)

°C/W

NOTES:

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, all electrical characteristics @25°C.

4/ Per leg for SDR6642CTUB.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RC0207A

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