SDR6K-TXV

更新时间： 2024-09-27 03:38:27

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	146K
描述
6.0 AMPS 800 - 1000 VOLTS 90 nsec ULTRA FAST RECTIFIER

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数据手册

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SDR6K-TXV 数据手册

SDR6K and SDR6M

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

6.0 AMPS

800 ─ 1000 VOLTS

90 nsec ULTRA FAST RECTIFIER

Designer’s Data Sheet

Part Number/Ordering Information ^1/

SDR6 __ __ __

FEATURES:

•

Ultra Fast Recovery:

90 ns Max @ 25^°C ^4/

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV

115-120 ns Max @ 100^°C ^4/

│

└

│

└

•

Single Chip Construction

PIV to 1000 Volts

Low Reverse Leakage Current

Hermetically Sealed

For High Efficiency Applications

Metallurgically Bonded

Replaces Larger DO-4 Rectifiers

TX, TXV, and S-Level Screening Available

Available in Surface Mount Versions

S = S Level

Package Type

__ = Axial Leaded

K = 800V

M = 1000V

Family

MAXIMUM RATINGS ^3/

RATING

SYMBOL

VALUE

UNIT

Peak Repetitive Reverse

Voltage

V_RRM

V_RWM

V_R

SDR1K

SDR1M

800

1000

Volts

And

DC Blocking Voltage

Rectified Forward Forward Current

(Resistive Load, 60 Hz, Sine Wave, T_A= 25°C)

I_O

Amp

Peak Surge Current

(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach

equilibrium between pulses, T_A= 25°C)

150

I_FSM

Amps

-65 to +175

Operating & Storage Temperature

T_OPand T_STG

R_θJL

°C

Thermal Resistance, Junction to Lead, L = 3/8”

°C/W

Axial Leaded

NOTES:

1/ For Ordering Information, Price, and Availability- Contact Factory.

2/ Screened to MIL-PRF-19500.

3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.

4/ Recovery Conditions: I_F= 0.5 Amp, I_R= 1.0 Amp, I_RRto .25 Amp.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RU0017B

DOC

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