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SDR3NHF PDF预览

SDR3NHF

更新时间: 2024-11-29 06:11:03
品牌 Logo 应用领域
SSDI /
页数 文件大小 规格书
2页 31K
描述
3 AMP 800 - 1200 V 35 nsec Hyper Fast Rectifier

SDR3NHF 技术参数

生命周期:Active包装说明:HERMETIC SEALED PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.59应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:E-XALF-W2最大非重复峰值正向电流:70 A
元件数量:1相数:1
端子数量:2最大输出电流:3 A
封装主体材料:UNSPECIFIED封装形状:ELLIPTICAL
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:1200 V最大反向恢复时间:0.035 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

SDR3NHF 数据手册

 浏览型号SDR3NHF的Datasheet PDF文件第2页 
SDR3KHF & SDR3KHFSMS  
thru  
SDR3NHF & SDR3NHFSMS  
Solid State Devices, Inc.  
14830 Valley View Blvd * La Mirada, Ca 90638  
Phone: (562) 404-7855 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
3 AMP  
800 - 1200 V  
35 nsec  
Features:  
· Hyper Fast Recovery: 35 nsec maximum  
· PIV to 1200 Volts  
Hyper Fast Rectifier  
· Hermetically Sealed  
· Void Free Construction  
· For High Efficiency Applications  
· Single Chip Construction  
· Low Reverse Leakage  
Axial Lead Diode  
SMS  
· TX, TXV, S Level screening Available  
Maximum Ratings  
Symbol  
Value  
Units  
VRRM  
VRSM  
VR  
800  
1000  
1200  
Peak Repetitive Reverse and DC Blocking Voltage  
SDR3KHF  
SDR3MHF  
SDR3NHF  
Volts  
Average Rectified Forward Current  
(Resistive Load, 60 hz Sine Wave, TA = 25 °C)  
Io  
3.0  
Amps  
Peak Surge Current  
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)  
IFSM  
TOP & TSTG  
R?JE  
70  
Amps  
ºC  
-65 to +175  
Operating & Storage Temperature  
Maximum Thermal Resistance  
Junction to Leads, L = 3/8  
Junction to Tabs  
20  
14  
ºC/W  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0097A  
DOC  

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