SDR3A and SDR3ASMS
thru
SDR3N and SDR3NSMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
3.0 AMPS
Designer’s Data Sheet
Part Number/Ordering Information 1/
50 ─ 1200 VOLTS
50 – 80 nsec ULTRA FAST RECTIFIER
SDR1 __ __ __
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
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│
│
│
│
│
│
│
└
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│
│
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│
└
└
FEATURES:
•
Ultra Fast Recovery:
50-80 ns Max @ 25°C 4/
85-125 ns Max @ 100°C 4/
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•
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•
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Single Chip Construction
PIV to 1200 Volts
Low Reverse Leakage Current
Hermetically Sealed
For High Efficiency Applications
Available in Axial and Surface Mount Versions
Metallurgically Bonded
S = S Level
Package Type
__ = Axial Leaded
SMS = Surface Mount Square Tab
A = 50 V
B = 100V
D = 200V
G = 400V
J = 600V
K = 800V
M = 1000V
N = 1200V
Family
TX, TXV, and S-Level Screening Available
MAXIMUM RATINGS 3/
RATING
SYMBOL
VALUE
UNIT
SDR3A and SDR3ASMS
SDR3B and SDR3BSMS
SDR3D and SDR3DSMS
SDR3G and SDR3GSMS
SDR3J and SDR3JSMS
SDR3K and SDR3KSMS
SDR3M and SDR3MSMS
SDR3N and SDR3NSMS
50
100
200
400
600
800
1000
1200
Peak Repetitive Reverse
Voltage
VRRM
VRWM
VR
Volts
And
DC Blocking Voltage
Rectified Forward Forward Current
(Resistive Load, 60 Hz, Sine Wave, TA = 25°C)
3
IO
Amp
Peak Surge Current
75
IFSM
Amps
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, TA = 25°C)
-65 to +175
Operating & Storage Temperature
TOP and TSTG
°C
Thermal Resistance, Junction to Lead, L = 3/8”
Junction to End Tab
RθJL
RθJE
20
14
°C/W
NOTES:
SMS
Axial Leaded
1/ For Ordering Information, Price, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
4/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, IRR to .25 Amp.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0013D
DOC