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SDM20U30LP-7 PDF预览

SDM20U30LP-7

更新时间: 2024-11-24 02:52:15
品牌 Logo 应用领域
美台 - DIODES 肖特基二极管
页数 文件大小 规格书
3页 73K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

SDM20U30LP-7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DFN
包装说明:DFN1006-2, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:1.24
其他特性:HIGH RELIABILITY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.35 VJESD-30 代码:R-PBCC-N2
JESD-609代码:e4湿度敏感等级:1
最大非重复峰值正向电流:1 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):260
最大功率耗散:0.25 W认证状态:Not Qualified
最大重复峰值反向电压:30 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
Base Number Matches:1

SDM20U30LP-7 数据手册

 浏览型号SDM20U30LP-7的Datasheet PDF文件第2页浏览型号SDM20U30LP-7的Datasheet PDF文件第3页 
SPICE MODEL: SDM20U30LP  
SDM20U30LP  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Lead-free Green  
Features  
·
Low Forward Voltage Drop  
·
Guard Ring Construction for  
Transient Protection  
·
·
·
·
·
Low Capacitance  
Ultra-Small Surface Mount Package  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
DFN1006-2  
G
Dim Min  
Max  
Typ  
H
A
B
C
D
G
H
N
R
Qualified to AEC-Q101 Standards for High Reliability  
0.95 1.075 1.00  
0.55 0.675 0.60  
Mechanical Data  
0.45  
0.20  
0.47  
0
0.55  
0.30  
0.53  
0.05  
¾
0.50  
0.25  
0.50  
0.03  
0.40  
0.10  
A
·
·
Case: DFN1006-2  
Case Material: Molded Plastic, "Green" Molding  
Compound. UL Flammability Classification Rating 94V-0  
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: Cathode Dot  
B
C
¾
0.05  
0.15  
Terminals: Finish ¾ NiPdAu annealed over Copper  
leadframe. Solderable per MIL-STD-202, Method 208  
All Dimensions in mm  
N
D
·
·
·
Marking Code: LM, Dot Denotes Cathode Side  
Ordering Information: See Last Page  
Weight: 0.001 grams  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
30  
VR(RMS)  
IFM  
V
mA  
A
RMS Reverse Voltage  
21  
200  
Maximum (Peak) Forward Current  
Peak Forward Surge Current  
IFSM  
8.3ms Half Sine  
1.0  
Tj, TSTG  
Operating and Storage Temperature Range  
-65 to +125  
°C  
@ TA = 25°C unless otherwise specified  
Thermal Characteristics  
Characteristic  
Power Dissipation  
Symbol  
Value  
250  
Unit  
mW  
Pd  
RqJA  
Thermal Resistance, Junction to Ambient Air  
400  
°C/W  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
V(BR)R  
Reverse Breakdown Voltage (Note 3)  
IR = 150mA  
30  
¾
¾
V
IF = 20mA  
IF = 200mA  
350  
575  
VF  
Forward Voltage Drop  
¾
¾
mV  
VR = 30V  
150  
30  
mA  
mA  
IR  
Peak Reverse Current (Note 3)  
Total Capacitance  
¾
¾
¾
V
R = 10V  
VR = 0V, f = 1.0MHz  
CT  
20  
¾
pF  
Note: 1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Short duration pulse test used so as to minimize self-heating effect.  
DS30589 Rev. 7 - 2  
1 of 3  
SDM20U30LP  
www.diodes.com  
ã Diodes Incorporated  

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Rectifier Diode, Schottky, 1 Element, 0.25A, 40V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-2