Datasheet > SDB720WS

SDB720WS

更新时间： 2024-11-23 09:30:35

品牌	Logo	应用领域
商升特 - SEMTECH		二极管局域网
页数	文件大小	规格书
2页	172K
描述
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

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中文翻译

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数据手册

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SDB720WS 数据手册

SDB720WS

SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

PINNING

for high frequency rectification

DESCRIPTION

Cathode

Anode

Top View

Marking Code: "RH"

Simplified outline SOD-323 and symbol

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Peak Reverse Voltage

Reverse Voltage

V_RM

V_R

I_O

Average Forward Current

0.5

Non-repetitive Peak Forward Surge Current

Junction Temperature

I_FSM

T_j

125

Storage Temperature Range

T_s

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Typ.

Max.

Unit

Forward Voltage

at I_F= 500 mA

V_F

I_R

0.55

Reverse Current

at V_R= 35 V

100

µA

Terminal Capacitance

at V_R= 0 V, f = 1 MHz

C_T

t_rr

Reverse Recovery Time

at I_F= I_R= 100 mA, I_rr= 10 mA, R_L= 100 Ω

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 16/01/2007

中文翻译

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