Datasheet > SDB10D100P

SDB10D100P

更新时间： 2024-02-28 12:57:04

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
4页	287K
描述
Rectifier Diode,

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技术参数
数据手册

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SDB10D100P 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.76
Base Number Matches：	1

SDB10D100P 数据手册

SDB10D100P

Semiconductor

High Voltage Schottky Rectifier

Applications

• High speed switching and rectification

• Switching mode power supply

PIN Connection

Features

• Dual chip common cathode

• Low forward voltage & low reverse current

1. Anode

2. Cathode

3. Anode

• Low switching loss

1 2 3

TO-220AB-3L

Ordering Information

Type No.

Marking

Package Code

SDB10D100P

SDB10D100

TO-220AB-3L

Absolute Maximum Ratings

Characteristic

[T_C=25°C]

Symbol

Rating

100

Unit

Repetitive peak reverse voltage

Average rectified output current

V_RRM

I_O

Peak forward surge current

(Non-repetitive 60Hz sine wave)

I_FSM

120

Junction temperature

T_J

150

°C

Storage temperature range

T_STG

-45 ~ 150

Electrical Characteristics

[T_C=25°C]

Characteristic

Symbol

Test Condition

Min. Typ. Max. Unit

1), 2)

Peak forward voltage

V_FM

I_F=5A

0.85

㎂

1), 2)

Repetitive peak reverse current

Thermal resistance

I_RRM

V_R=100V

R_th

Junction to case

3.0

°C/W

1) Per Diode

2) Pulse test : t_P≤380 ㎲, Duty cycle≤2%

KSD-D0P003-002

12 3 4

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