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SDB110 PDF预览

SDB110

更新时间: 2024-09-22 22:22:11
品牌 Logo 应用领域
TSC 二极管
页数 文件大小 规格书
2页 101K
描述
1.0 AMP. Schottky Barrier Rectifiers

SDB110 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.84
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.8 V湿度敏感等级:1
最大非重复峰值正向电流:30 A元件数量:1
最高工作温度:150 °C最大输出电流:1 A
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
Base Number Matches:1

SDB110 数据手册

 浏览型号SDB110的Datasheet PDF文件第2页 
SDBS12 THRU SDBS110  
1.0 AMP. Schottky Barrier Rectifiers  
Voltage Range  
20 to 100 Volts  
Current  
1.0 Ampere  
DB  
Features  
Metal to silicon rectifier, majority carrier conduction  
Low forward voltage drop  
Easy pick and place  
High surge current capability  
Plastic material used carriers Underwriters  
Laboratory Classification 94V-O  
Epitaxial construction  
High temperature soldering:  
260oC/ 10 seconds at terminals  
Small size, single installation lead solderable per  
MIL-STD-202 Method 208  
DBS  
.205(5.2)  
.195(5.0)  
.047(1.20)  
.040(1.02)  
Mechanical Data  
.404(10.3)  
.386(9.80)  
Case: Molded plastic  
Terminals: Solder plated  
Polarity: Indicated by cathode band  
.255(6.5)  
.245(6.2)  
.335(8.51)  
.320(8.13)  
450  
.013(0.33)  
.0088(0.22)  
.130(3.30)  
.120(3.05)  
.060(1.53)  
.040(1.02)  
.013(0.33)  
.003(0.076)  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
SDB SDB SDB SDB SDB SDB SDB  
Symbol  
Type Number  
Units  
12  
13  
14  
15  
16  
19  
110  
SDBS SDBS SDBS SDBS SDBS SDBS SDBS  
12  
20  
14  
20  
13  
30  
21  
30  
14  
40  
28  
40  
15  
50  
35  
50  
16  
60  
42  
60  
19  
90  
63  
90  
110  
100  
70  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
V
V
V
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Rectified Current  
at TL(See Fig. 1)  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
I(AV)  
1.0  
A
A
V
IFSM  
30  
Maximum Instantaneous Forward Voltage  
(Note 1) @ 1.0A  
VF  
IR  
0.5  
10  
0.75  
5.0  
0.80  
Maximum DC Reverse Current @ TA =25  
at Rated DC Blocking Voltage @ TA=100℃  
0.4  
0.05  
0.5  
mA  
mA  
Typical Junction Capacitance (Note 3)  
Typical Thermal Resistance ( Note 2 )  
Cj  
50  
pF  
/W  
/W  
RθJL  
RθJA  
TJ  
28  
88  
Operating Temperature Range  
Storage Temperature Range  
-65 to +125  
-65 to +150  
-65 to +150  
TSTG  
Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle  
2. Measured on P.C.Board with 0.5 x 0.5”(12 x 12mm) Copper Pad Areas.  
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.  
- 50 -  

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