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SDB10S30 PDF预览

SDB10S30

更新时间: 2024-02-26 21:31:54
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管肖特基二极管
页数 文件大小 规格书
9页 579K
描述
Silicon Carbide Schottky Diode

SDB10S30 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220包装说明:PLASTIC, TO-220SMD, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.87Is Samacsys:N
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON CARBIDE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.7 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e0最大非重复峰值正向电流:36 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:300 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SDB10S30 数据手册

 浏览型号SDB10S30的Datasheet PDF文件第2页浏览型号SDB10S30的Datasheet PDF文件第3页浏览型号SDB10S30的Datasheet PDF文件第4页浏览型号SDB10S30的Datasheet PDF文件第5页浏览型号SDB10S30的Datasheet PDF文件第6页浏览型号SDB10S30的Datasheet PDF文件第7页 
SDP10S30, SDB10S30  
SDT10S30  
Preliminary data  
Silicon Carbide Schottky Diode  
Revolutionary semiconductor  
material - Silicon Carbide  
Product Summary  
V
V
300  
RRM  
Switching behavior benchmark  
No reverse recovery  
No temperature influence on  
the switching behavior  
No forward recovery  
Q
23  
nC  
A
c
I
10  
F
P-TO220-2-2.  
P-TO220-3.SMD  
P-TO220-3-1.  
Type  
SDP10S30  
Package  
P-TO220-3-1.  
Ordering Code  
Q67040-S4372  
Marking Pin 1  
PIN 2 PIN 3  
D10S30  
D10S30  
D10S30  
n.c.  
n.c.  
C
C
C
A
A
A
SDB10S30  
SDT10S30  
P-TO220-3.SMD Q67040-S4373  
P-TO220-2-2. Q67040-S4447  
Maximum Ratings,at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
I
10  
14  
36  
A
Continuous forward current, T =100°C  
RMS forward current, f=50Hz  
F
C
I
FRMS  
Surge non repetitive forward current, sine halfwave I  
FSM  
T =25°C, t =10ms  
C
p
Repetitive peak forward current  
I
45  
FRM  
T =150°C, T =100°C, D=0.1  
j
C
Non repetitive peak forward current  
I
100  
FMAX  
t =10µs, T =25°C  
p
C
2
2
6.5  
300  
300  
65  
i t value, T =25°C, t =10ms  
i dt  
A²s  
V
C
p
Repetitive peak reverse voltage  
V
RRM  
RSM  
tot  
Surge peak reverse voltage  
V
P
W
Power dissipation, T =25°C  
C
°C  
Operating and storage temperature  
T , T  
-55... +175  
j
stg  
Page 1  
2001-12-04  

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