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SD219-51-03-301 PDF预览

SD219-51-03-301

更新时间: 2024-01-20 22:33:25
品牌 Logo 应用领域
ADVANCEDPHOTONIX 光电二极管光电二极管
页数 文件大小 规格书
1页 102K
描述
Blue Enhanced Linear Array Silicon Photodiode

SD219-51-03-301 技术参数

生命周期:TransferredReach Compliance Code:unknown
HTS代码:8541.40.60.50风险等级:5.59
Is Samacsys:NBase Number Matches:1

SD219-51-03-301 数据手册

  
Blue Enhanced Linear Array Silicon Photodiode  
SD 219-51-03-301  
PACKAGE DIMENSIONS INCH [mm]  
.758 [19.25]  
.738 [18.74]  
14X .165 [4.19] MIN  
.128 [3.25]  
.505 [12.83]  
14  
13  
A
12  
D
11  
10  
J
9
8
.305 [7.75]  
.295 [7.49]  
B
C
E
F
G
H
K
L M  
.300 [7.62]  
14X .010 [0.25] X  
.018 [0.46] LEADS  
1
2
3
4
5
7
6
.063 [1.60]  
.043 [1.09]  
.075 [1.91]  
.100 [2.54] TYP  
.116 [2.95]  
.096 [2.44]  
CHIP DIMENSIONS INCH [mm]  
.038 [0.97]  
.039 [1.00] PITCH  
PIN CONNECTIONS  
ELEMENT  
PIN NO.  
ELEMENT  
H
J
K
L
M
PIN NO.  
10  
5
9
6
8
7
14  
A
B
C
D
E
1
13  
2
12  
3
11  
4
12X .080 [2.03]  
.124 [3.15]  
ACTIVE AREA  
F
G
CATHODE  
CATHODE  
11X .001 [0.03] GAP  
12X .038 [0.97] ACTIVE AREA  
CERAMIC PACKAGE  
FEATURES  
Compact package  
• Blue enhanced  
DESCRIPTION  
The SD 219-51-03-301 is a blue enhanced linear  
array 12 elements silicon photodiode available in a  
ceramic package.  
APPLICATIONS  
• Medical  
• Industrial  
SPECTRAL RESPONSE  
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
0.70  
0.60  
0.50  
0.40  
0.30  
0.20  
0.10  
0.00  
SYMBOL  
VBR  
PARAMETER  
MIN  
MAX  
50  
UNITS  
Reverse Voltage  
V
TSTG  
TO  
Storage Temperature  
Operating Temperature  
Soldering Temperature*  
-40  
-40  
+100  
+75  
°C  
°C  
°C  
TS  
+240  
* 1/16 inch from case for 3 seconds max.  
Wavelength (nm)  
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
SYMBOL  
CHARACTERISTIC  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
ID  
RSH  
CJ  
lrange  
VBR  
Dark Current  
Shunt Resistance  
Junction Capacitance  
Spectral Application Range  
VR = 10V  
2.7  
nA  
MΩ  
pF  
VR = 10 mV  
VR =0 V, f = 1 MHz  
Spot Scan  
600  
28  
33  
1100  
-
350  
-
nm  
I = 10 μA  
Breakdown Voltage  
V
NEP  
Noise Equivalent Power  
1.4x10-14  
190  
W/ Hz  
VR = 0V @ l=Peak  
RL = 50 ,VR = 0 V  
RL = 50 ,VR = 10 V  
tr  
Response Time**  
nS  
13  
**Response time of 10% to 90% is specified at 660nm wavelength light.  
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are  
subject to change without notice.  
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com  

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