SD200SC100B

更新时间： 2024-11-25 04:32:31

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SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop 200∑C Operating Temperature

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SD200SC100B 数据手册

SENSITRON

SD200SC100A/B/C

SEMICONDUCTOR

Technical Data

Data Sheet 522, Rev.-

SILICON SCHOTTKY RECTIFIER DIE

Very Low Forward Voltage Drop

200°C Operating Temperature

Applications:

• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

Features:

•

Soft Reverse Recovery at Low and High Temperature

Very Low Forward Voltage Drop

Low Power Loss, High Efficiency

•

High Surge Capacity

Guard Ring for Enhanced Durability and Long Term Reliability

Guaranteed Reverse Avalanche Characteristics

Electrically / Mechanically Stable during and after Packaging

Out Performs 100 Volt Ultrafast Rectifiers

Maximum Ratings⁽¹⁾:

Characteristics

Symbol

V_RWM

I_F(AV)

Condition

Max.

100

Units

Peak Inverse Voltage

Max. Average Forward

Current

Max. Peak One Cycle Non-

Repetitive Surge Current

Non-Repetitive Avalanche

Energy

50% duty cycle, rectangular

wave form

I_FSM

E_AS

I_AR

8.3 ms, half Sine wave ⁽¹⁾

860

13.5

0.90

T_J= 25 °C, I_AS= 0.90 A,

L = 33 mH

I_ASdecay linearly to 0 in 1 µs

Repetitive Avalanche Current

ƒ limited by T_Jmax V_A=1.5V_R

Max. Junction Temperature

Max. Storage Temperature

T_J

T_stg

-65 to +200

°C

Electrical Characteristics⁽¹⁾:

Characteristics

Symbol

V_F1

Condition

@ 60A, Pulse, T_J= 25 °C

@ 60A, Pulse, T_J= 125 °C

@V_R= 100V, Pulse,

T_J= 25 °C

Max.

0.87

0.72

1.0

Units

Max. Forward Voltage Drop

V_F2

I_R1

Max. Reverse Current

I_R2

C_T

@V_R= 100V, Pulse,

T_J= 125 °C

@V_R= 5V, T_C= 25 °C

f_SIG= 1MHz,

V_SIG= 50mV (p-p)

Max. Junction Capacitance

(1) in SHD package

1500

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