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SD1660 PDF预览

SD1660

更新时间: 2024-11-25 22:50:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体射频双极晶体管微波光电二极管放大器局域网
页数 文件大小 规格书
7页 78K
描述
RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS

SD1660 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PDFM-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:EMITTER最大集电极电流 (IC):0.4 A
基于收集器的最大容量:100 pF集电极-发射极最大电压:30 V
配置:COMMON EMITTER, 2 ELEMENTS最小直流电流增益 (hFE):15
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDFM-F4
元件数量:2端子数量:4
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):310 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

SD1660 数据手册

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SD1660  
RF & MICROWAVE TRANSISTORS  
800/900 MHz APPLICATIONS  
.
.
.
.
.
860 - 900 MHz  
24 VOLTS  
CLASS AB PUSH PULL  
INTERNAL INPUT MATCHING  
DESIGNED FOR HIGH POWER LINEAR  
OPERATION  
HIGH SATURATED POWER CAPABILITY  
.
.
2 x .437 x .450 2LFL (M175)  
GOLD METALLIZATION FOR HIGH  
RELIABILITY  
epoxy sealed  
ORDER CODE  
BRANDING  
SD1660  
.
DIFFUSED EMITTER BALLAST  
RESISTORS  
COMMON EMITTER CONFIGURATION  
SD1660  
.
.
POUT 120 W MIN. WITH 6.0 dB GAIN  
=
PIN CONNECTION  
DESCRIPTION  
The SD1660 is a gold metallized epitaxial silicon  
NPN planar transistor using diffused emitter ballast  
resistors for high linearity Class AB operation in  
cellular base station applications.  
1. Collector  
2. Base  
3. Emitter  
°
= 25 C)  
ABSOLUTE MAXIMUM RATINGS (T  
case  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
60  
Unit  
Collector-Base Voltage  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
Device Current  
30  
3.0  
V
25  
A
PDISS  
TJ  
Power Dissipation  
310  
+200  
W
°
Junction Temperature  
Storage Temperature  
C
C
°
TSTG  
55 to +150  
0.55  
THERMAL DATA  
RTH(j-c)  
Junction-Case Thermal Resistance  
°C/W  
1/7  
November 1992  

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