Datasheet > SD107WS

SD107WS

更新时间： 2024-11-27 09:31:23

品牌	Logo	应用领域
金誉半导体 - HTSEMI		肖特基二极管
页数	文件大小	规格书
2页	337K
描述
SCHOTTKY BARRIER DIODE

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中文翻译

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数据手册

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SD107WS 数据手册

SD107WS

SCHOTTKY BARRIER DIODE

SOD-323

FEATURES

Low Forward Voltage Drop

Guard Ring Die Construction for Transient Protection

Ideal for low logic level applications

Low Capacitance

Also Available in Lead Free Version

MARKING: SG

Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25℃

Symb

Parameter

Limits

Unit

Non-Repetitive Peak reverse voltage

Forward Current

V_RM

100

℃/W

℃

I_FM

I_FSM

P_tot

Forward surge Current

Power dissipation

t_p=10ms

750

T_C=25℃

250

Thermal resistance junction to ambient air

Junction temperature

T_өJA

T_J

500

150

Storage temperature

T_STG

-65~+150

℃

Electrical Ratings @T_A=25℃

Parameter

Symbol

Min.

Typ

Max. Unit

Conditions

Reverse breakdown voltage

V_R

IR=100µA

300

360

470

580

I_F=2mA

I_F=15mA

I_F=50mA

I_F=100mA

Forward voltage

V_F

550

800

Reverse current

I_R

µA

V_R=25V

Capacitance between terminals

C_T

V_R=10V,f=1MHz

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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