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SC1405BTR PDF预览

SC1405BTR

更新时间: 2024-11-27 12:59:03
品牌 Logo 应用领域
商升特 - SEMTECH 驱动器
页数 文件大小 规格书
12页 136K
描述
Half Bridge Based MOSFET Driver, 2A, CMOS, PDSO14, 0.635 MM PITCH, MO-153AB1, TSSOP-14

SC1405BTR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSSOP
包装说明:TSSOP, TSSOP14,.25针数:14
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.91
高边驱动器:YES接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G14JESD-609代码:e0
长度:5 mm功能数量:1
端子数量:14最高工作温度:125 °C
最低工作温度:标称输出峰值电流:2 A
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP14,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
座面最大高度:1.2 mm子类别:MOSFET Drivers
最大供电电压:6 V最小供电电压:4.15 V
标称供电电压:5 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:24 µs
接通时间:32 µs宽度:4.4 mm
Base Number Matches:1

SC1405BTR 数据手册

 浏览型号SC1405BTR的Datasheet PDF文件第2页浏览型号SC1405BTR的Datasheet PDF文件第3页浏览型号SC1405BTR的Datasheet PDF文件第4页浏览型号SC1405BTR的Datasheet PDF文件第5页浏览型号SC1405BTR的Datasheet PDF文件第6页浏览型号SC1405BTR的Datasheet PDF文件第7页 
HIGH SPEED SYNCHRONOUS POWER  
MOSFET SMART DRIVER  
SC1405  
August 31, 2000  
TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com  
DESCRIPTION  
FEATURES  
The SC1405 is a Dual-MOSFET Driver with an internal  
Overlap Protection Circuit to prevent shoot-through  
from VIN to GND in the main switching and syn-  
chronous MOSFET’s. Each driver is capable of driving  
a 3000pF load in 20ns rise/fall time and has ULTRA-  
FAST propagation delay from input transition to the  
gate of the power FET’s. The Overlap Protection circuit  
ensures that the second FET does not turn on until the  
top FET source has reached a voltage low enough to  
prevent shoot-through. The delay between the bottom  
gate going low to the top gate transitioning to high is  
externally programmable via a capacitor for optimal  
reduction of switching losses at the operating fre-  
quency. The bottom FET may be disabled at light loads  
by keeping S_MOD low to trigger asynchronous opera-  
tion, thus saving the bottom FET’s gate drive current  
and inductor ripple current. An internal voltage refer-  
ence allows threshold adjustment for an Output Over-  
Voltage protection circuitry, independent of the PWM  
feedback loop. Under-Voltage-Lock-Out circuit is in-  
cluded to guarantee that both driver outputs are low  
when the 5V logic level is less than or equal to 4.4V  
(typ) at supply ramp up (4.35V at supply ramp down). A  
CMOS output provides status indication of the 5V sup-  
ply. A low enable input places the IC in stand-by mode  
thereby reducing supply current to less than 10µA.  
SC1405 is offered in a high pitch (.025” lead spacing)  
TSSOP package.  
= Fast rise and fall times (20ns typical with 3000pf  
load)  
= 20ns max. Propagation delay (BG going low)  
= Adaptive/programmable shoot-through protection  
= Wide input voltage range (4.5-25V)  
= Programmable delay between MOSFET’s  
= Power saving asynchronous mode control  
= Output overvoltage protection/overtemp shutdown  
= Under-Voltage lock-out and power ready signal  
= Less than 10µA stand-by current (EN=low)  
= Power ready output signal  
APPLICATIONS  
= High Density/Fast transient power supplies  
= Motor Drives/Class-D amps  
= High frequency (to 1.2 MHz) operation allows use  
of small inductors and low cost caps in place of  
electrolytics  
= Portable computers  
ORDERING INFORMATION  
DEVICE(1)  
PACKAGE  
TEMP. RANGE (TJ)  
SC1405TS.TR TSSOP-14  
0 - 125°C  
Note:  
(1) Only available in tape and reel packaging. A reel  
contains 2500 devices.  
PIN CONFIGURATION  
BLOCK DIAGRAM  
Top View  
(14-Pin TSSOP)  
1
© 2000 SEMTECH CORP.  
652 MITCHELL ROAD NEWBURY PARK CA 91320  

SC1405BTR 替代型号

型号 品牌 替代类型 描述 数据表
SC1405B.TR SEMTECH

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Half Bridge Based MOSFET Driver, 3A, CMOS, PDSO14, 0.635 MM PITCH, MO-153AB1, TSSOP-14
SC1405B SEMTECH

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High Speed Synchronous Power MOSFET Smart Driver
SC1405TS.TR SEMTECH

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HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER

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