Datasheet > SC-75A

SC-75A

更新时间： 2024-02-25 11:49:01

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	45K
描述
P-Channel 1.8-V (G-S) MOSFET

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SC-75A 数据手册

Si1013R/X

Vishay Siliconix

New Product

P-Channel 1.8-V (G-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(mA)

1.2 @ V = –4.5 V

–350

–300

–150

–20

1.6 @ V = –2.5

2.7 @ V = –1.8

FEATURES

BENEFITS

APPLICATIONS

D High-Side Switching

D Ease in Driving Switches

D Low Offset (Error) Voltage

D Low-Voltage Operation

D High-Speed Circuits

D Drivers: Relays, Solenoids, Lamps,

Hammers, Displays, Memories

D Low On-Resistance: 1.2 W

D Low Threshold: 0.8 V (typ)

D Fast Swtiching Speed: 14 ns

D 1.8-V Operation

D Battery Operated Systems

D Power Supply Converter Circuits

D Load/Power Switching Cell Phones, Pagers

D Low Battery Voltage Operation

D Gate-Source ESD Protection

SC-75A or SC-89

Ordering Information:

SC-75A (SOT– 416):

Si1013R–Marking Code : D

SC-89 (SOT– 490):

Si1013X–Marking Code: B

Top View

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

–20

= 25_C

= 85_C

–400

–300

–350

–275

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

–1000

Continuous Source Current (diode conduction)

–275

175

–250

150

= 25_C

= 85_C

= 25_C

= 85_C

Maximum Power Dissipation for SC-75

275

160

250

140

Maximum Power Dissipation for SC-89

Operating Junction and Storage Temperature Range

Gate-Source ESD Rating (HBM, Method 3015)

T , T

–55 to 150

2000

stg

ESD

Notes

a. Pulse width limited by maximum junction temperature.

b. Surface Mounted on FR4 Board.

Document Number: 71167

S-02464—Rev. A, 25-Oct-00

www.vishay.com

12 3 4 5

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