Datasheet > SBR60A60CTI

SBR60A60CTI

更新时间： 2024-11-26 08:00:39

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
2页	65K
描述
Rectifier Diode, 1 Phase, 2 Element, 60A, 60V V(RRM), Silicon, TO-262AA, PLASTIC, TO-262, 3 PIN

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SBR60A60CTI 数据手册

SBR60A60CT - Prel

SBR60A60CTF - Prel

SBR60A60CTI - Prel

SBR60A60CTB - Prel

Using state-of-the-art SBR IC process technology,

the following features are made possible in a single device:

Major ratings and characteristics

Device optimized for low forward voltage drop to

maximize efficiency in Power Supply applications

Characteristics

_F(AV)Rectangular Waveform

Values

Units

V_RRM

V_F@30A, Tj=125^OC

0.59

V, typ

^OC

Tj (operating/storage)

-65 to 150

ELECTRICAL:

MECHANICAL:

* Low Forward Voltage Drop

* Reliable High Temperature Operation

* Super Barrier Design

* Molded Plastic TO-220AB, TO-262, TO-263, and

ITO-220 packages

* Softest, fast switching capability

* 150^OC Operating Junction Temperature

Case Styles

SBR60A60CT

SBR60A60CTF

SBR60A60CTI

SBR60A60CTB

Common

Cathode

Common

Cathode

Common

Cathode

Anode

_Anode1

_Anode1 ^Cathode

Anode

TO-220AB

ITO-220

TO-262

TO-263

________________________________________________________________________________________________

www.apdsemi.com Version 0.0 - Preliminary, April 2006

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