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SBR40U200CTF PDF预览

SBR40U200CTF

更新时间: 2024-11-11 13:13:15
品牌 Logo 应用领域
美台 - DIODES 整流二极管局域网
页数 文件大小 规格书
5页 106K
描述
Rectifier Diode, 1 Phase, 2 Element, 40A, 200V V(RRM), Silicon, TO-220AB, PLASTIC, ITO-220, 3 PIN

SBR40U200CTF 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:PLASTIC, ITO-220, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.7
Is Samacsys:N应用:EFFICIENCY
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:300 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:40 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:200 V表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

SBR40U200CTF 数据手册

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SBR40U200CT  
40A SBR®  
SUPER BARRIER RECTIFIER  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Ultra Low Forward Voltage Drop  
Excellent High Temperature Stability  
Case: TO-220AB  
Case Material: Molded Plastic, UL Flammability Classification  
Rating 94V-0  
Terminals: Matte Tin Finish annealed over Copper leadframe.  
Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 2  
Ordering Information: See Page 2  
Weight: 1.85 grams (approximate)  
Patented Super Barrier Rectifier Technology  
Soft, Fast Switching Capability  
150ºC Operating Junction Temperature  
Lead Free Finish, RoHS Compliant (Note 2)  
Also Available in Green Molding Compound (Note 4)  
TO-220AB  
Bottom View  
TO-220AB  
Top View  
Package Pin Out  
Configuration  
Maximum Ratings (Per Leg) @T = 25°C unless otherwise specified  
A
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitance load, derate current by 20%.  
Characteristic  
Symbol  
VRRM  
VRWM  
VRM  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
200  
V
Average Rectified Output Current Per Device  
(Per Leg)  
(Total)  
20  
40  
A
A
IO  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single Half Sine-Wave Superimposed on Rated Load  
240  
IFSM  
Thermal Characteristics (Per Leg)  
Characteristic  
Symbol  
Value  
Unit  
ºC/W  
ºC  
Typical Thermal Resistance  
Thermal Resistance Junction to Case (Note 3)  
Thermal Resistance, Junction to Ambient (Note 3)  
Rθ  
JC  
0.6  
7.8  
Rθ  
JA  
Operating and Storage Temperature Range  
-65 to +150  
TJ, TSTG  
Electrical Characteristics (Per Leg) @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
IF = 20A, TJ = 25ºC  
IF = 20A, TJ = 125ºC  
0.83  
0.68  
0.89  
0.73  
Forward Voltage Drop (per leg)  
-
V
VF  
VR = 200V, TJ = 25ºC  
VR = 200V, TJ = 125ºC  
IF = 0.5A, IR = 1A, IRR = 0.25A  
IF = 1A, VR = 30V  
0.2  
40  
Leakage Current (Note 1)  
Reverse Recovery Time  
-
-
-
-
mA  
IR  
38  
25  
50  
ns  
trr  
35  
di/dt = 100A/μs, TJ = 25ºC  
Notes:  
1. Short duration pulse test used to minimize self-heating effect.  
2. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at http://www.diodes.com/products/lead_free.html.  
3. Device mounted on heatsink (Black Aluminum, 50mm x 37mm x 15mm)  
SBR is a registered trademark of Diodes Incorporated.  
SBR40U200CT  
1 of 4  
www.diodes.com  
December 2009  
© Diodes Incorporated  
Document number: DS31242 Rev. 4 - 2  

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