Datasheet > SBR40100

SBR40100

更新时间： 2024-11-24 06:10:11

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	158K
描述
VOLTAGE 100 V 40.0 Amp Schottky Barrier Rectifiers

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SBR40100 数据手册

SBR40100

VOLTAGE 100 V

40.0 Amp Schottky Barrier Rectifiers

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

TO-247 (TO-3P)

z Low forward voltage drop

z High current capability

z High reliability

z High surge current capability

z Epitaxial construction

.638(16.20)

.605(15.38)

.144(3.65)

.128(3.25)

DIA.

.204(5.20)

.181(4.60)

.319(8.10)

.303(7.69)

.244(6.20)

.228(5.8)

.177(4.50)

.881(22.38)

.812(20.63)

.122(3.1)

.110(2.8)

.153(3.90)

.095

(2.4)

MECHANICAL DATA

z Case: Molded plastic

z Epoxy: UL94V-0 rate flame retardant

z Lead: Lead solderable per MIL-STD-202

method 208 guaranteed

.846(21.50)

.728(18.50)

.050(1.30)

.045(1.10)

.027(0.70)

.019(0.48)

.223(5.66)

.207(5.26)

Dimensions in inches (millimeters)

z Polarity: As Marked

z Mounting position: Any

z Weight: 6.1 grams (Approximately)

Pin 1

Pin 2

Case

Pin 3

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25°C ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

TYPE NUMBER

SYMBOL VALUES UNITS

Maximum Recurrent Peak Reverse Voltage

Working Peak Reverse Voltage

V_RRM

V_RSM

V_DC

100

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current, See Fig. 1

Per Leg

I_F

I_FSM

V_F

I_R

Per Device

Peak Forward Surge Current, 8.3 ms single half sine-wave

Superimposed on rated load (JEDEC method)

250

Maximum Instantaneous Forward Voltage (I_F=20 A, T_A= 25°C, per leg)

Maximum Instantaneous Forward Voltage (I_F=20 A, T_A= 125°C, per leg)

Maximum DC Reverse Current at

0.85

0.70

T_A= 25°C

T_A= 125°C

0.05

Rated DC Blocking Voltage

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Voltage Rate of Chance (Rated V_R)

Operating Temperature Range

Storage Temperature Range

C_J

R_θJA

dv / dt

T_J

500

°C / W

V / μs

°C

2.0

10000

-50 ~ +150

-65 ~ +175

T_STG

°C

NOTES:

1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.

2. Thermal Resistance Junction to Case.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

01-June-2007 Rev. B

Page 1 of 2

中文翻译

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