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SBR100-10JS PDF预览

SBR100-10JS

更新时间: 2024-02-16 18:47:36
品牌 Logo 应用领域
三洋 - SANYO 二极管局域网
页数 文件大小 规格书
3页 36K
描述
Schottky Barrier Diode (Twin Type · Cathode Common) 100V, 10A Rectifier

SBR100-10JS 技术参数

生命周期:Transferred零件包装代码:TO-220AB
包装说明:TO-220ML(LS), 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.2
Is Samacsys:N其他特性:HIGH RELIABILITY
应用:GENERAL PURPOSE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.85 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:80 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

SBR100-10JS 数据手册

 浏览型号SBR100-10JS的Datasheet PDF文件第2页浏览型号SBR100-10JS的Datasheet PDF文件第3页 
Ordering number : ENA0560  
SANYO Sem iconductors  
DATA S HEET  
Schottky Barrier Diode (Twin Type · Cathode Common)  
SBR100-10JS  
100V, 10A Rectifier  
Applications  
High frequency rectification (switching regulators, converters, choppers).  
Features  
Low reverse current.  
Low switching noise.  
High reliability due to planar structure.  
Attachment workability is good by Mica-less package.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Repetitive Peak Reverse Voltage  
Nonrepetitive Peak Reverse Surge Voltage  
Average Output Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
100  
105  
10  
RRM  
V
RSM  
I
O
50Hz resistive load, Tc=107°C  
A
Surge Forward Current  
I
50Hz sine wave, 1 cycle  
80  
A
FSM  
Tj  
Junction Temperature  
--55 to +150  
--55 to +150  
°C  
°C  
Storage Temperature  
Tstg  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Reverse Voltage  
Symbol  
Conditions  
Unit  
min  
100  
max  
V
I
=2mA, Tj=25°C*  
V
V
R
R
Forward Voltage  
V
I =5A, Tj=25°C*  
F
0.85  
100  
F
Reverse Current  
I
V
=50V, Tj=25°C*  
=10V, Tj=25°C*  
µA  
R
R
R
Interterminal Capacitance  
Thermal Resistance  
Note) * : Value per element  
C
V
170  
pF  
Rth(j-c)  
Junction-Case : Smoothed DC  
4.0  
°C / W  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
N0806SD SY IM TC-00000297 No. A0560-1/3  

SBR100-10JS 替代型号

型号 品牌 替代类型 描述 数据表
20CTQ150 MICROSEMI

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