CURRENT 16.0Amperes
VOLTAGE 20 to 100 Volts
SBP1620 THRU SBP16100
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
ITO-220
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
0.2
0.1
0.2
4.5
0.5
3.2
10
0.2
2.7
· High current capability, Low forward voltage drop
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· Dual rectifier construction
· High temperature soldering guaranteed:
250℃/10 seconds, 0.25" (6.35mm) from case
0.2
1.3
0.2
0.2
0.2
0.7
2.54
0.5
2.4
Mechanical Data
0.2
0.2
2.54
· Case : JEDEC ITO-220 molded plastic body
· Terminals : Lead solderable per
PIN 1
PIN 3
PIN 1
PIN 3
+
MIL-STD-750, Method 2026
CASE
PIN 2
CASE
PIN 2
· Polarity : As marked. No suffix indicates Common
Cathode, suffix "A" indicates Common Anode
· Mounting Position : Any
Negative CT
Suffix "A"
Positive CT
Suffix "C"
· Weight : 0.08ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
SBP
SBP
SBP
SBP
SBP
SBP
SBP
Symbols
Units
Volts
Volts
Volts
1620
1630
1640
1650
1660
1680 16100
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
RRM
RMS
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
100
70
V
Maximum DC blocking voltage
VDC
100
Maximum average forward rectified current
at Tc=95℃
I(AV
)
16.0
32.0
Amps
Amps
Repetitive peak forward current(square wavr,
20KHZ) at Tc=105℃
IFRM
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
IFSM
150.0
Amps
Maximum instantaneous forward voltage
at 8.0A (Note 1)
V
F
0.65
0.75
0.80
0.85
Volts
mA
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
T
T
A
A
=25℃
1.0
5.0
IR
=125℃
30
50
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
Notes:
RθJC
℃/W
℃
T
J
-65 to +125
-65 to +150
℃
T
STG
-65 to +150
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case