Datasheet > SBP2040

SBP2040

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
DAESAN		/
页数	文件大小	规格书
2页	331K
描述
CURRENT 20.0Amperes VOLTAGE 20 to 100 Volts

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数据手册

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SBP2040 数据手册

CURRENT 20.0Amperes

VOLTAGE 20 to 100 Volts

SBP2020 THRU SBP20100

Features

· Plastic Package has Underwriters Laboratory

Flammability Classification 94V-0

ITO-220

· Metal silicon junction, majority carrier conduction

· Guard ring for overvoltage protection

· Low power loss, high efficiency

0.2

0.1

0.2

4.5

0.5

3.2

0.2

2.7

· High current capability, Low forward voltage drop

· High surge capability

· For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

· Dual rectifier construction

· High temperature soldering guaranteed:

250℃/10 seconds, 0.25" (6.35mm) from case

0.2

1.3

0.2

0.7

2.54

0.5

2.4

0.2

Mechanical Data

2.54

· Case : JEDEC TO-220 molded plastic body

· Terminals : Lead solderable per

PIN 1

PIN 3

PIN 1

PIN 3

CASE

PIN 2

CASE

PIN 2

MIL-STD-750, Method 2026

Negative CT

Suffix "A"

Positive CT

Suffix "C"

· Polarity : As marked. No suffix indicates Common

Cathode, suffix "A" indicates Common Anode

· Mounting Position : Any

Dimensions in inches and (millimeters)

· Weight : 0.08ounce, 2.24 grams

Maximum Ratings and Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive

load. For capacitive load, derate by 20%)

SBP

2020

SBP

2030

SBP

2040

SBP

2050

SBP

Symbols

Units

Volts

2060 2080 20100

Maximum repetitive peak reverse voltage

Maximum RMS voltage

RRM

RMS

100

Maximum DC blocking voltage

VDC

100

Maximum average forward rectified current

at Tc=105℃

I(AV

)

20.0

Amps

Peak forward surge current 8.3ms single half

sine-wave superimposed on rated load

(JEDEC method)

FSM

150.0

125.0

Maximum instantaneous forward voltage

at 10A (Note 1)

0.60

0.75

0.90

Volts

Maximum instantaneous reverse

current at rated DC blocking

voltage (Note1)

=25℃

1.0

=100℃

100.0

3.5

Typical thermal resistance (Note 2)

Operating junction temperature range

Storage temperature range

RθJC

℃/W

℃

-50 to +125

-65 to +150

℃

STG

Notes:

(1) Pulse test: 300μS pulse width, 1% duty cycle

(2) Thermal resistance from junction to case

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