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SBM1040CT-13 PDF预览

SBM1040CT-13

更新时间: 2024-11-20 22:22:19
品牌 Logo 应用领域
美台 - DIODES 整流二极管瞄准线功效
页数 文件大小 规格书
3页 73K
描述
10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

SBM1040CT-13 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete包装说明:R-PSSO-G2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.46Is Samacsys:N
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.42 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e0湿度敏感等级:1
最大非重复峰值正向电流:50 A元件数量:2
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):235认证状态:Not Qualified
最大重复峰值反向电压:40 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:10
Base Number Matches:1

SBM1040CT-13 数据手册

 浏览型号SBM1040CT-13的Datasheet PDF文件第2页浏览型号SBM1040CT-13的Datasheet PDF文件第3页 
SBM1040CT  
10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER  
POWERMITEÒ3  
DEVELOPMENT  
UNDER  
Features  
·
Guard Ring Die Construction for  
Transient Protection  
·
·
·
·
Low Power Loss, High Efficiency  
High Surge Capability  
Very Low Forward Voltage Drop  
For Use in Low Voltage, High Frequency  
Inverters, OR’ing, and Polarity Protection  
Applications  
POWERMITEâ3  
E
A
P
Min  
4.03  
6.40  
Max  
4.09  
6.61  
Dim  
A
G
3
B
C
.889 NOM  
1.83 NOM  
1.10 1.14  
.178 NOM  
·
Plastic Material: UL Flammability  
Classification Rating 94V-0  
H
J
D
B
E
G
H
1
2
Mechanical Data  
5.01  
5.17  
4.43  
M
·
·
·
Case: POWERMITEâ3 Molded Plastic  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Polarity: See Diagram  
Marking: See Sheet 2  
Weight: 0.072 grams (approx.)  
J
4.37  
D
K
K
.178 NOM  
C
C
L
L
.71  
.36  
.77  
.46  
M
P
·
·
·
PIN 1  
PIN 2  
PIN 3, BOTTOMSIDE  
HEAT SINK  
1.73  
1.83  
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Value  
40  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
VR(RMS)  
RMS Reverse Voltage  
28  
V
A
Average Rectified Output Current (See also Figure 5)  
per element  
total device  
5
10  
IO  
Non-Repetitive Peak Forward Surge Current  
IFSM  
8.3ms Single half sine-wave Superimposed on Rated Load  
50  
A
Per Package (JEDEC Method), total device  
TC = 115°C  
RqJS  
Tj  
Typical Thermal Resistance Junction to Soldering Point Per Element  
Operating Temperature Range  
2.5  
°C/W  
°C  
-55 to +125  
-55 to +150  
TSTG  
Storage Temperature Range  
°C  
DS30356 Rev. 2 - 1  
1 of 3  
www.diodes.com  
SBM1040CT  

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