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SBL2040PT PDF预览

SBL2040PT

更新时间: 2024-01-29 05:44:33
品牌 Logo 应用领域
SIRECTIFIER 二极管瞄准线功效局域网
页数 文件大小 规格书
2页 124K
描述
Low VF Schottky Barrier Rectifiers

SBL2040PT 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-3P
包装说明:ROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.52
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.55 VJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:250 A
元件数量:2相数:1
端子数量:3最高工作温度:125 °C
最大输出电流:20 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:40 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Bright Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
Base Number Matches:1

SBL2040PT 数据手册

 浏览型号SBL2040PT的Datasheet PDF文件第2页 
SBL2030PT thru SBL2045PT  
Low VF Schottky Barrier Rectifiers  
Dim.  
Millimeter  
Min. Max. Min.  
Inches  
Max.  
Dimensions TO-247AD  
A
C
A
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
A
C
A
C(TAB)  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
E
F
4.32 5.49 0.170 0.216  
A=Anode, C=Cathode, TAB=Cathode  
5.4  
6.2 0.212 0.244  
VRRM  
V
VRMS  
V
VDC  
V
G
H
1.65 2.13 0.065 0.084  
-
4.5  
-
0.177  
SBL2030PT  
SBL2035PT  
SBL2040PT  
SBL2045PT  
30  
21  
30  
35  
40  
45  
J
K
1.0  
1.4 0.040 0.055  
10.8 11.0 0.426 0.433  
35  
24.5  
28  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
40  
45  
31.5  
N
1.5 2.49 0.087 0.102  
Symbol  
Characteristics  
Maximum Ratings  
Unit  
I(AV)  
IFSM  
VF  
Maximum Average Forward Rectified Current @TC=95oC  
20  
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave  
Superimposed On Rated Load (JEDEC METHOD)  
250  
A
V
Maximum Forward Voltage At 10A DC (Note 1)  
0.55  
Maximum DC Reverse Current  
At Rated DC Blocking Voltage  
@TJ=25oC  
1
50  
IR  
mA  
@TJ=100oC  
CJ  
ROJC  
TJ  
Typical Junction Capacitance Per Element (Note 2)  
Typical Thermal Resistance (Note 3)  
Operating Temperature Range  
600  
pF  
oC/W  
oC  
2.5  
-55 to +125  
-55 to +150  
TSTG  
Storage Temperature Range  
oC  
NOTES: 1. 300us Pulse Width, 2% Duty Cycle.  
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.  
3. Thermal Resistance Junction To Case.  
FEATURES  
MECHANICAL DATA  
* Metal of silicon rectifier, majority carrier conducton  
* Guard ring for transient protection  
* Low power loss, high efficiency  
* High current capability, low VF  
* Case: TO-247AD molded plastic  
* Polarity: As marked on the body  
* Weight: 0.2 ounces, 5.6 grams  
* Mounting position: Any  
* High surge capacity  
* For use in low voltage, high frequency inverters, free  
whelling, and polarity protection applications  

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