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SBL2045DPT{TUBE} PDF预览

SBL2045DPT{TUBE}

更新时间: 2024-11-19 13:00:47
品牌 Logo 应用领域
美台 - DIODES 二极管
页数 文件大小 规格书
3页 60K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 45V V(RRM), Silicon

SBL2045DPT{TUBE} 技术参数

生命周期:Obsolete包装说明:R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.73
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:ANODE AND CATHODE配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.6 VJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:250 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:45 V最大反向电流:1000 µA
表面贴装:NO技术:SCHOTTKY
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

SBL2045DPT{TUBE} 数据手册

 浏览型号SBL2045DPT{TUBE}的Datasheet PDF文件第2页浏览型号SBL2045DPT{TUBE}的Datasheet PDF文件第3页 
SBL2030CT - SBL2060CT  
20A SCHOTTKY BARRIER RECTIFIER  
Please click here to visit our online spice models database.  
Features  
L
Schottky Barrier Chip  
Guard Ring Die Construction for Transient Protection  
Low Power Loss, High Efficiency  
High Surge Capability  
High Current Capability and Low Forward Voltage Drop  
For Use in Low Voltage, High Frequency Inverters, Free  
Wheeling, and Polarity Protection Applications  
Lead Free Finish, RoHS Compliant (Note 3)  
TO-220AB  
B
M
Dim  
A
B
C
D
E
Min  
Max  
14.48 15.75  
10.00 10.40  
C
D
E
2.54  
5.90  
2.80  
3.43  
6.40  
3.93  
K
A
1
2
3
G
H
J
12.70 14.27  
2.40  
0.69  
3.54  
4.07  
1.15  
0.30  
2.04  
2.70  
0.93  
3.78  
4.82  
1.39  
0.50  
2.79  
Mechanical Data  
G
Case: TO-220AB  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Polarity: As Marked on Body  
Terminals: Finish – Tin. Solderable per MIL-STD-202,  
Method 208  
J
N
K
L
M
N
P
H
H
P
Pin 1 +  
Pin 2 -  
Pin 3 +  
+
Case  
All Dimensions in mm  
Marking: Type Number  
Weight: 2.24 grams (approximate)  
Maximum Ratings and Electrical Characteristics @TA = 25°C unless otherwise specified  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SBL  
SBL  
SBL  
SBL  
SBL  
SBL  
Characteristic  
Symbol  
Unit  
2030CT 2035CT 2040CT 2045CT 2050CT 2060CT  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
21  
35  
40  
28  
45  
50  
35  
60  
42  
V
RMS Reverse Voltage  
Average Rectified Output Current  
(Note 1)  
24.5  
31.5  
V
A
VR(RMS)  
20  
IO  
@ TC = 95°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single Half Sine-Wave Superimposed on Rated Load  
250  
A
V
IFSM  
VFM  
IRM  
0.55  
0.75  
Forward Voltage Drop  
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ IF = 10A, TC = 25°C  
@ TC 25°C  
@ TC = 100°C  
=
1.0  
50  
mA  
Typical Junction Capacitance (Note 2)  
650  
2.8  
pF  
°C/W  
°C  
Cj  
Typical Thermal Resistance Junction to Case (Note 1)  
Operating and Storage Temperature Range  
Rθ  
JC  
-65 to +150  
TJ, TSTG  
Notes:  
1. Thermal resistance junction to case mounted on heatsink.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.  
DS23015 Rev. 9 - 2  
1 of 3  
www.diodes.com  
SBL2030CT - SBL2060CT  
© Diodes Incorporated  

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