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SBJ2630 PDF预览

SBJ2630

更新时间: 2024-11-21 09:34:23
品牌 Logo 应用领域
德欧泰克 - DIOTEC 整流二极管IOT局域网
页数 文件大小 规格书
2页 119K
描述
Schottky Barrier Rectifier Diodes - Single Diode

SBJ2630 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-220AC包装说明:ITO-220AC, 2 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.48Is Samacsys:N
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2最大非重复峰值正向电流:320 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-50 °C最大输出电流:18 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:30 V
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SBJ2630 数据手册

 浏览型号SBJ2630的Datasheet PDF文件第2页 
SBJ2620 ... SBJ2645  
Version 2010-09-30  
SBJ2620 ... SBJ2645  
Schottky Barrier Rectifier Diodes – Single Diode  
Schottky-Barrier-Gleichrichterdioden – Einzeldiode  
Nominal current  
Nennstrom  
26 A  
20...45 V  
ITO-220AC  
1.8 g  
10.1±0.3  
2.6±0.2  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
Ø 3.2±0.2  
4.5±0.2  
Type  
Typ  
Isolated plastic case  
Isoliertes Kunststoffgehäuse  
1
3
2.6±0.2  
Weight approx.  
Gewicht ca.  
1
3
1.3  
0.7±0.2  
0.6±0.1  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
5.08±0.1  
Dimensions - Maße [mm]  
Standard packaging in tubes  
Standard Lieferform in Stangen  
Maximum ratings and Characteristics  
Grenz- und Kennwerte  
Type  
Typ  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
VRRM [V]  
Surge peak reverse voltage  
Stoßspitzensperrspannung  
VRSM [V]  
Forward voltage  
Durchlass-Spannung  
VF [V] 1)  
IF = 5 A  
< 0.50  
< 0.50  
< 0.50  
< 0.50  
IF = 26 A  
< 0.58  
< 0.58  
< 0.58  
< 0.58  
SBJ2620  
SBJ2630  
SBJ2640  
SBJ2645  
20  
30  
40  
45  
20  
30  
40  
45  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TC = 100°C  
f > 15 Hz  
IFAV  
IFRM  
IFSM  
i2t  
18 A  
Repetitive peak forward current  
Periodischer Spitzenstrom  
55 A 2)  
280/320 A  
390 A2s  
Peak forward surge current, 50/60 Hz half sine-wave SBJ2620... TA = 25°C  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
SBJ2645  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
TA = 25°C  
Junction temperature – Sperrschichttemperatur  
Tj  
Tj  
-50...+150°C  
≤ 200°C  
in DC forward mode – bei Gleichstrom-Durchlassbetrieb  
1
2
Tj = 25°C  
Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 

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