Datasheet > SB61H1024AS-10G

SB61H1024AS-10G

更新时间： 2024-10-02 21:19:19

品牌	Logo	应用领域
MINI		静态存储器
页数	文件大小	规格书
8页	92K
描述
SRAM

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中文翻译

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技术参数
数据手册

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SB61H1024AS-10G 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.8
Base Number Matches：	1

SB61H1024AS-10G 数据手册

SB61H1024AS-XG

131,072 ×8-Bits

Silicon-BasedTechnology

Very High Speed and Low Power Memory

STATIC CMOS RAM

PRELIMINARY

Description:

The SB61H1024AS-XG series products are 131,072-words by 8-bits static RAM fabricated with

advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and

special poly-load 4-transistor memory cells, the SB61H1024AS-XG series products exhibit very

high-speed performance with single +5-volt power supply while requiring very low power and no

clock or refreshing to operate. The SB61H1024AS-XG is packed in a standard 32-pin 300mil SOJ

and other packages are available upon preorder.

Features:

131,072-word x 8-bit organization

Single +5-volt power supply

•

Fully static operation

no clock or refreshing required

LVTTL-compatible inputs and outputs

Common I/O capability

Low power consumption

Active: 180/160/140 mA Max.

Standby: 5 mA

Very high speed access: 10/12/15 ns Max.

32-pin plastic 300 mil SOJ green package

•

Output Enable

available for very fast access

•

Ordering Information:

Part Number

Supply Current mA

(Max.)

Access

Time

ns(Max.)

Supply

Voltage

(Typ.)

Word

Organization

Package

Operating Standby

SB61H1024AS-10G

180

32 Pin Plastic

SB61H1024AS 12G

160

128K 8 bits

5V 10%

SOJ

(300 mil)

SB61H1024AS 15G

140

The information in this document is subject to change without notice

Silicon-Based Technology Corporation

1F,No.23, R&D Rd.I, Science-Based Industrial Park, Hsinchu, Taiwan, R.O.C.

Tel 886-3-5777897

Fax 886-3-5779832

12 3 4 5 6 7 8

中文翻译

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