Datasheet > SB620F_04

SB620F_04

更新时间： 2024-11-05 03:33:35

品牌	Logo	应用领域
强茂 - PANJIT		肖特基二极管分离技术隔离技术
页数	文件大小	规格书
2页	46K
描述
ISOLATION SCHOTTKY BARRIER RECTIFIERS

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中文翻译

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数据手册

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SB620F_04 数据手册

DATA SHEET

SB620F~SB660F

ISOLATION SCHOTTKY BARRIER RECTIFIERS

Unit : inch (mm)

ITO-220AC

6.0 Ampers

20 to 60 Volts

CURRENT

VOLTAGE

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O utilizing

Flame Retardant Epoxy Molding Compound.

.189(4.8)

.165(4.2)

.406(10.3)

.381(9.7)

.134(3.4)

.118(3.0)

.130(3.3)

.114(2.9)

• Exceeds environmental standards of MIL-S-19500/228

• Low power loss, high efficiency.

• Low forwrd voltge, high current capability

• High surge capacity.

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

• Pb free product are available : 99% Sn above can meet Rohs environment

substance directive request

.114(2.9)

.098(2.5)

.071(1.8)

.055(1.4)

MECHANICALDATA

.055(1.4)

.039(1.0)

.032(.8)

MAX

Case: ITO-220AC full molded plastic package

Terminals: Lead solderable per MIL-STD-202G, Method 208

Polarity: As marked.

.035(0.9)

.011(0.3)

(2.55)

Mounting Position: Any

Weight: 0.08 ounces, 2.24grams.

MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PARAMETER

SYMBOL SB620F SB630F SB640F SB650F SB660F UNITS

Maximum Recurrent Peak Reverse Voltage

RRM

RMS

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current .375"(9.5mm)

lead length at Tc =75^OC

6.0

Peak Forward Surge Current :8.3ms single half sine-wave

superimposed on rated load(JEDEC method)

FSM

Maximum Forward Voltage at 6.0A

0.55

0.70

Maximum DC Reverse Current T

at Rated DC Blocking Voltage T

=25^OC

0.2

=100^OC

RθJC

RθJA

Typical Thermal Resistance

^OC / W

^OC

Operating Junction Temperature Range

Storage Temperature Range

-50 to +125

-50 to +150

,TSTG

^OC

NOTES:

Both Bonding and Chip structure are available.

PAGE . 1

STAD-MAY.05.2004

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