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SB3100-T

更新时间： 2024-01-06 15:26:45
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
3页 77K
描述
3.0A SCHOTTKY BARRIER RECTIFIER

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中文翻译

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SB3100-T 数据手册

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SB370 - SB3100  
3.0A SCHOTTKY BARRIER RECTIFIER  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
•
•
•
•
•
•
Schottky Barrier Chip  
Guard Ring Die Construction for Transient Protection  
Low Power Loss, High Efficiency  
High Surge Capability  
High Current Capability and Low Forward Voltage Drop  
Surge Overload Rating to 80A Peak  
For Use in Low Voltage, High Frequency Inverters, Free  
Wheeling, and Polarity Protection Applications  
Lead Free Finish, RoHS Compliant (Note 3)  
•
•
Case: DO-201AD  
Case Material: Molded Plastic. UL Flammability Classification  
Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish - Tin. Solderable per MIL-STD-202,  
Method 208  
•
•
•
•
•
•
Polarity: Cathode Band  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 1.1 grams (approximate)  
•
Maximum Ratings and Electrical Characteristics @T = 25°C unless otherwise specified  
A
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitance load, derate current by 20%.  
Characteristic  
Symbol  
VRRM  
VRWM  
VR  
SB370  
70  
SB380  
80  
SB390  
90  
SB3100  
100  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
RMS Reverse Voltage  
Average Rectified Output Current  
(Note 1)  
49  
56  
63  
70  
V
A
VR(RMS)  
3.0  
IO  
@ TL = 80°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single Half Sine-Wave Superimposed on Rated Load  
100  
A
V
IFSM  
VFM  
IRM  
0.79  
Forward Voltage  
@ IF = 3.0A  
@ TA 25°C  
@ TA = 100°C  
Peak Reverse Current  
at Rated DC Blocking Voltage  
=
0.5  
20  
mA  
Typical Junction Capacitance (Note 2)  
250  
pF  
Cj  
Thermal Characteristics  
Characteristic  
Symbol  
SB370  
SB380  
SB390  
SB3100  
Unit  
Typical Thermal Resistance Junction to Ambient  
20  
K/W  
Rθ  
JA  
Operating and Storage Temperature Range  
-65 to +150  
TJ, TSTG  
°C  
Notes:  
1. Measured at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
3. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, See EU Directive Annex Notes 5 and 7.  
1 of 3  
www.diodes.com  
July 2008  
© Diodes Incorporated  
SB370 - SB3100  
Document number: DS30134 Rev. 3 - 2  
123

中文翻译

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SB3100-T 替代型号

型号 品牌 替代类型 描述 数据表
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